IGBT结构设计发展与展望

doi:10.16257/j.cnki.1681-1070.2018.0012

摘要/Abstract

摘要： 首先从绝缘栅型双极性晶体管（IGBT）的物理模型展开讨论，分析了影响IGBT性能的几个重要特性参数，对其结构的优化和改进提供了理论支撑。其次论述了IGBT问世以来的主要结构设计发展历程，以及国际主流IGBT设计厂商对各自IGBT产品结构做出的独创性改进。最后对目前研究的新技术热点如逆导型IGBT半导体器件进行了介绍，并对IGBT器件的发展方向提出展望。

关键词: IGBT, PT, NPT, SPT, Trench-FS, CSTBT, RC-IGBT

Abstract: In this letter,the physical model of insulated gate bipolar transistor(IGBT)was discussed firstly.Several important parameters that affect the performance of IGBT were analyzed,in order to provide theoretical support for the optimization and improvement of IGBT structural design.Moreover,the development of IGBT structural design and creative improvements made by different mainstream designers from the appearance of IGBT were mainly discussed.Furthermore,a new attractive research point,reverse conducting IGBT semiconductor device was introduced to explore the prospect of IGBT development.

Key words: IGBT, PT, NPT, SPT, Trench-FS, CSTBT, RC-IGBT

中图分类号:

TM215.92

李碧姗，王昭，董妮. IGBT结构设计发展与展望[J]. 电子与封装, 2018, 18(2): 1 -8.

LI Bishan,WANG Zhao,DONG Ni. Development and Perspective of IGBT Structural Design[J]. Electronics & Packaging, 2018, 18(2): 1 -8.

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