中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

导航

电子与封装 ›› 2018, Vol. 18 ›› Issue (11): 44 -47. doi: 10.16257/j.cnki.1681-1070.2018.0127

• 微电子制造与可靠性 • 上一篇    

漏电流的伏安特征曲线在分立器件失效分析中的应用

陈 松,王友彬   

  1. 英飞凌科技(无锡)有限公司,江苏无锡 214028
  • 收稿日期:2018-08-04 出版日期:2018-11-20 发布日期:2018-11-20
  • 作者简介:陈 松(1975—),安徽芜湖人,本科学历,高级测试工程师,现任职于英飞凌(无锡)科技有限公司。

Application of the Characteristic Curve of Leakage Current in the Failure Analysis of Discrete Devices

CHEN Song,WANG Youbin   

  1. Infineon Technologies (Wuxi) Co.,Ltd.Wuxi 214028,China
  • Received:2018-08-04 Online:2018-11-20 Published:2018-11-20

摘要: 针对半导体分立器件漏电流失效在后道封装工厂难以确定失效模式和失效机理的问题,引入漏电流的伏安特征曲线分析的方法,针对各种漏电流失效模式进行实验分析,利用漏电流特征曲线的方法将有可靠性风险的器件筛选出来。通过此方法在后道封装测试工厂大规模推广应用,大大提高了失效分析的效率和准确性,提升了产品质量,节约了成本,很好地达到了客户对产品质量和成本的期望。

关键词: 特征曲线, 失效分析, 缺陷

Abstract: In order to quickly and accurate define leakage failure mode and failure mechanism in semiconductor backend assembly factory,we introduce leakage current characteristic curve analysis method,this method through experimental analysis lager samples leakage failure cases,comparison and analysis current leakage characteristic curve and compare with failure mode,work out the leakage current characteristic curves method,fast and accurate screen out reliability risk products and no reliability risk products.This method have already implemented in the backend assembly factory,greatly improved efficiency and accuracy,improved the productquality,save cost,hasreached the customer expectationsofquality and cost.

Key words: leakage currentcharacteristic curve, failure analysis, defect

中图分类号: