基于导通延迟补偿的并联MOS栅控晶闸管均流方法研究

doi:10.16257/j.cnki.1681-1070.2021.0714

电子与封装 ›› 2021, Vol. 21 ›› Issue (7): 070403 . doi: 10.16257/j.cnki.1681-1070.2021.0714

基于导通延迟补偿的并联MOS栅控晶闸管均流方法研究

袁榕蔚;刘超;陈万军

电子科技大学电子薄膜与集成器件国家重点实验室，成都　610054

收稿日期:2021-03-04 出版日期:2021-07-22 发布日期:2021-04-28
作者简介:袁榕蔚（1996—），男，吉林省吉林市人，硕士研究生，研究方向为新型功率半导体器件与集成电路和系统。

Research on Parallel Current Sharing ofMOS Gate Controlled Thyristor Based on Gate Resistance on Delay Compensation

YUAN Rongwei, LIU Chao, CHEN Wanjun

State KeyLaboratory of Electronic Thin Film and Integrated Device, University of Electronic Science and Technology ofChina, Chengdu 610054, China

Received:2021-03-04 Online:2021-07-22 Published:2021-04-28

摘要/Abstract

摘要： 阴极短路MOS栅控晶闸管(CS-MCT)在电容型脉冲功率系统中应用广泛，但面临电流极限的问题，尤其在大电容高电压条件下，这就需要解决MCT器件并联均流的问题。首先通过理论和仿真分析栅驱动电阻对并联均流的影响，并通过导通延迟补偿法对器件均流进行改善。再通过测试验证MCT并联可以提高电流极限，并通过测试验证导通延迟补偿法可以改善器件均流特性。

关键词: MOS栅控晶闸管, 并联均流, 导通延迟补偿, 栅电阻

Abstract: A cathodic short MOS-controlled thyristor (CS-MCT) has been widely used in the capacitive pulse power systems. However, it has the problem of current limit, especially in the condition of large capacitance and high voltage. Therefore, it is necessary to solve the parallel current sharing problem of MCT devices. The influence of gate drive resistance on parallel current sharing was analyzed by simulation, and the current sharing was improved by gate resistance delay compensation method. Then it is verified that MCT parallel connection can improve the current limit, and it is verified that the gate resistance compensation method can improve the current sharing characteristics.

Key words: MOS-controlledthyristor, parallelcurrent-sharing, conductiondelaycompensation, gateresistance

中图分类号:

TN306

袁榕蔚;刘超;陈万军. 基于导通延迟补偿的并联MOS栅控晶闸管均流方法研究[J]. 电子与封装, 2021, 21(7): 070403 .

YUAN Rongwei, LIU Chao, CHEN Wanjun. Research on Parallel Current Sharing ofMOS Gate Controlled Thyristor Based on Gate Resistance on Delay Compensation[J]. Electronics & Packaging, 2021, 21(7): 070403 .

[1]	周琪钧，田冕，刘超，陈万军. 亚阈电流对MOS栅控晶闸管dV/dt抗性的影响[J]. 电子与封装, 2020, 20(8): 80402-.
[2]	张兴强，陈楠，陈万军. 一种基于CS-MCT串联的脉冲放电电路设计与实现[J]. 电子与封装, 2020, 20(7): 70305-.
[3]	刘亚伟，陈万军. MOS栅控晶闸管在超高di/dt应用中的失效分析[J]. 电子与封装, 2018, 18(7): 45-48.

中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

基于导通延迟补偿的并联MOS栅控晶闸管均流方法研究

Research on Parallel Current Sharing ofMOS Gate Controlled Thyristor Based on Gate Resistance on Delay Compensation

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