关键词: 应变硅, 氮化硅, 压应力, 张应力

Abstract: Silicon integrated circuit technology driven by the equal scale reduction of CMOS devices has moved into the nano scale, and will continue to maintain the pursuit of Moore's law and further reduce the device size to meet the requirements of highly integrated chips. At present, strained silicon technology based on COMS process is used more and more widely. SiN strain technology is one of the strained silicon technologies. The process of this technology is relatively simple and the cost is low. Only by depositing SiN films with different stresses on devices, carrier mobility can be improved, therefore, it is more and more widely used. By using plasma-enhanced chemical vapor deposition (PECVD) SiN films, the transformation of compressive stress and tensile stress can be achieved through appropriate process conditions, and high stress SiN films with stresses greater than 2 GPa can be deposited on silicon wafers.

Key words: strained silicon, SiN, compressive stress, tensile stress