中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

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电子与封装 ›› 2023, Vol. 23 ›› Issue (4): 040403 . doi: 10.16257/j.cnki.1681-1070.2023.0028

• 材料、器件与工艺 • 上一篇    下一篇

生长在图形化蓝宝石衬底上的GaN薄膜光学性质研究

郑俊娜;王党会;许天旱   

  1. 西安石油大学新能源学院,西安 710065
  • 收稿日期:2022-09-05 出版日期:2023-04-27 发布日期:2023-04-27
  • 作者简介:郑俊娜(1994—),女,陕西咸阳人,硕士研究生,主要从事GaN基发光二极管的生长、表征及模拟等方面的研究。

Optical Properties of GaN Films Grown on PatternedSapphire Substrates

ZHENG Junna,WANG Danghui,XU Tianhan   

  1. School of New Energy,Xi'an Shiyou University,Xi'an710065, China
  • Received:2022-09-05 Online:2023-04-27 Published:2023-04-27

摘要: 图形化蓝宝石衬底(PSS)技术作为提高LED发光效率的方法之一,一直备受关注。研究了PSS上生长的GaN薄膜的表面形貌、吸收光谱、红外光谱、拉曼散射(Raman)和太赫兹光谱等,并与常规蓝宝石衬底上的GaN外延薄膜进行对比。结果表明,PSS上生长的GaN外延薄膜的表面形貌、光提取效率(LEE)得到明显改善。此研究成果对进一步提高GaN基短波(蓝/紫光)发光二极管(LED)的发光效率具有一定的借鉴意义,为进一步拓展PSS器件的太赫兹响应提供了依据。

关键词: 图形化蓝宝石衬底, GaN薄膜, 光学性质

Abstract: Patterned sapphire substrate(PSS) technologyhas been attracting much attention as one of the methods to improve the luminescence efficiency of LEDs. The optical properties of GaN films grown on PSS such as surface morphology, absorption spectra, infrared spectra, Raman scattering and terahertz spectra are investigated and compared with GaN epitaxial films on conventional sapphire substrates.The results show that the surface morphology and light extraction efficiency (LEE) of the GaN epitaxial films grown on PSS have been significantly improved.The research result has certain reference significance for further improving the luminous efficiency of GaN-based short-wave (blue/violet) LEDs, and provides a basis for further expanding the terahertz response of PSS devices.

Key words: patterned sapphire substrate, GaN film, opticalproperties

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