亚稳相Ga2O3异质外延的研究进展

doi:10.16257/j.cnki.1681-1070.2023.0048

摘要/Abstract

摘要： 作为一种新兴的超宽禁带半导体材料，氧化镓（Ga₂O₃）被认为是下一代高功率电力电子器件领域的战略性先进电子材料。相较于热稳定的β-Ga₂O₃，亚稳相Ga₂O₃表现出更为新颖的物理性质，逐渐受到关注。通过异质外延生长高质量的亚稳相Ga₂O₃单晶薄膜是实现亚稳相Ga₂O₃基功率电子、微波射频和深紫外光电信息感知器件的重要前提。重点阐述了亚稳相Ga₂O₃的晶体结构、电子能带结构以及相关物理性质，总结了近年来亚稳相Ga₂O₃异质外延和能带工程的研究进展，并对未来亚稳相Ga₂O₃材料和器件的发展趋势进行了展望。

关键词: 超宽禁带半导体, 亚稳相Ga2O3, 异质外延, 能带工程

Abstract: As an emerging ultra-wide bandgap semiconductor material, gallium oxide (Ga₂O₃) is considered to be a strategic advanced electronic material for the next generation high power electronics devices. Compared with the thermally stable β-Ga₂O₃, the metastable Ga₂O₃ materials have been attracted attention due to novel physical properties. The growth of high-quality metastable Ga₂O₃ single-crystal films by heterogeneous epitaxy is an important prerequisite for the realization of metastable Ga₂O₃-based power electronics, microwave RF and deep-UV optoelectronic information sensing devices. The crystal structure, electronic energy band structure and related physical properties of metastable Ga₂O₃ are highlighted, the research progress of metastable Ga₂O₃ heteroepitaxy and bandgap engineering of metastable Ga₂O₃ has been reviewed, and the future development trend of metastable Ga₂O₃ materials and devices is anticipated.

Key words: ultra-wide bandgapsemiconductor, metastableGa2O3, heteroepitaxy, bandgapengineering

中图分类号:

TN304
O471.4

汪正鹏, 叶建东, 郝景刚, 张贻俊, 况悦, 巩贺贺, 任芳芳, 顾书林, 张荣. 亚稳相Ga₂O₃异质外延的研究进展[J]. 电子与封装, 2023, 23(1): 010110 .

WANG Zhengpeng, YE Jiandong, HAO Jinggang, ZHANG Yijun, KUANG Yue, GONG Hehe, REN Fangfang, GU Shulin, ZHANG Rong. Advances in Heterogeneous Epitaxy ofMetastable Ga2O3[J]. Electronics & Packaging, 2023, 23(1): 010110 .

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中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

亚稳相Ga₂O₃异质外延的研究进展

Advances in Heterogeneous Epitaxy ofMetastable Ga2O3

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