中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

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电子与封装 ›› 2022, Vol. 22 ›› Issue (1): 010206 . doi: 10.16257/j.cnki.1681-1070.2022.0103

• 封装、组装与测试 • 上一篇    下一篇

LDO失效分析及改善

胡敏   

  1. 乐山无线电股份有限公司,四川 乐山 614000
  • 收稿日期:2021-05-27 出版日期:2022-01-25 发布日期:2021-07-13
  • 作者简介:胡敏(1968—),男,四川乐山人,硕士,工程师,现从事半导体封装测试相关技术工作。

LDO Failure Analysis and Countermeasure

HU Min   

  1. Leshan Radio Company, Ltd., Leshan, 614000, China
  • Received:2021-05-27 Online:2022-01-25 Published:2021-07-13

摘要: 低压差线性稳压器(Low Dropout Regulator,LDO)新品导入中,过强的铜线焊接会使焊球下芯片层间电介质层(Interlayer Dielectric,ILD)产生裂纹,从而导致器件测试漏电流失效或可靠性失效。通过对芯片结构的分析,指出LDO漏电流失效的原因,同时详细讨论了如何确定合理的铜线焊接参数、如何检测失效以及失效分析步骤。

关键词: 低压差线性稳压器, 铜线焊接, 漏电流失效, 可靠性, ILD层裂纹

Abstract: Final test leakage failure or reliability failure is common in low dropout regulator (LDO) new product introduction, it is mostly due to interlayer dielectric (ILD) crack under bonding pad caused by over copper wire bonding. Through the analysis of the chip structure, the causes of LDO leakage failure are pointed out. At the same time, how to determine reasonable copper wire bonding parameters, how to detect the defects and failure analysis steps are discussed in details.

Key words: LDO, copperwirebonding, leakagefailure, reliability, ILDcrack

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