自热效应下P-GaN HEMT的阈值漂移机理*

doi:10.16257/j.cnki.1681-1070.2022.0805

电子与封装 ›› 2022, Vol. 22 ›› Issue (8): 080401 . doi: 10.16257/j.cnki.1681-1070.2022.0805

自热效应下P-GaN HEMT的阈值漂移机理^*

匡维哲;周琦;陈佳瑞;杨凯;张波

电子科技大学电子薄膜与集成器件国家重点实验室，成都　610054

收稿日期:2022-01-11 出版日期:2022-08-26 发布日期:2022-05-06
作者简介:匡维哲（1997—），男，四川泸州人，硕士研究生，主要研究方向为GaN HEMT器件热可靠性及仿真。

Threshold Shift Mechanism of P-GaN HEMT Under Self-Heating Effect

KUANG Weizhe, ZHOU Qi, CHEN Jiarui, YANG Kai, ZHANG Bo

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

Received:2022-01-11 Online:2022-08-26 Published:2022-05-06

摘要/Abstract

摘要： 随着GaN功率应用朝着更高集成度与更高功率密度的方向发展，器件的自热效应及可靠性问题将变得更加严重。提出了一种开态漏极电流注入技术，模拟器件自热状态用以研究100 V P-GaN HEMT器件在自热效应下的可靠性问题。研究结果表明，应力中器件自热温度可达40~150 ℃，阈值电压在应力后发生0.2~0.8 V的显著正向漂移。进一步通过室温与高温下的器件恢复研究以及电热仿真分析，证明了栅下区域与栅漏接入区域的高温极值点增强了该区域的受主型电子陷阱俘获行为并改变了栅极处载流子输运，这是导致P-GaN HEMT在自热效应下阈值电压不稳定性的主要原因，并建立了相对应的物理机理模型。

关键词: P-GaNHEMT, 自热效应, 阈值漂移, 机理模型

Abstract: With the higher integration and higher power density development of GaN power application, self-heating effect and reliability problems of devices will be more serious. An on-state drain current injection technique is proposed to study the self-heating induced instability in commercial 100 V P-GaN HEMT. The research results show that the device self-heating temperature during the stress can reach 40-150 ℃，and significant threshold voltage positive shift after the stress can reach 0.2-0.8 V. Characteristic recovery experiments at room temperature and high temperature and electrothermal simulation results reveal that the high temperature extreme points both in gate region and gate-to-drain access region enhance the acceptor traps behavior and change the carrier transport in the gate, which are responsible for the threshold voltage instability in P-GaN HEMT under the self-heating effect. The corresponding physical mechanism model is established.

Key words: P-GaN HEMT, self-heating effect, threshold shift, mechanism model

中图分类号:

TN306

匡维哲;周琦;陈佳瑞;杨凯;张波. 自热效应下P-GaN HEMT的阈值漂移机理^*[J]. 电子与封装, 2022, 22(8): 080401 .

KUANG Weizhe, ZHOU Qi, CHEN Jiarui, YANG Kai, ZHANG Bo. Threshold Shift Mechanism of P-GaN HEMT Under Self-Heating Effect[J]. Electronics & Packaging, 2022, 22(8): 080401 .

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中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

自热效应下P-GaN HEMT的阈值漂移机理^*

Threshold Shift Mechanism of P-GaN HEMT Under Self-Heating Effect

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