VNPN 激光辐射效应模拟分析

doi:10.16257/j.cnki.1681-1070.2019.0610

电子与封装 ›› 2019, Vol. 19 ›› Issue (6): 041 -46. doi: 10.16257/j.cnki.1681-1070.2019.0610

VNPN 激光辐射效应模拟分析

左慧玲¹，高吴昊¹，刘承芳¹，夏云¹，孙鹏^2,3，陈万军¹

1.电子科技大学电子薄膜与集成器件国家重点实验室，成都 610054；2.中国工程物理研究院微系统与太赫兹研究中心，成都 610200；3.中国工程物理研究院电子工程研究所，四川绵阳 621999

收稿日期:2019-02-27 出版日期:2019-06-19 发布日期:2019-06-19
作者简介:左慧玲（1993—），女，河北唐山人，电子科技大学硕士研究生，研究方向为新型功率半导体器件与集成电路和系统。

Simulation Analysis of Laser Irradiation Effect of VNPN Transistor

ZUO Huiling¹,GAO Wuhao¹,LIU Chengfang¹,XIA Yun¹,SUN Peng^2,3,CHEN Wanjun¹

1.State Key Laboratory of Electronic Thin Film and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China；2.Microsystem and Terahertz Research Center,China Academy of Engineering Physics,Chengdu 610200,China；3.Institute of Electronic Engineering,China Academy of Engineering Physics,Mianyang 621999,China

Received:2019-02-27 Online:2019-06-19 Published:2019-06-19

摘要/Abstract

摘要： 通过仿真模拟脉冲激光对半导体器件光生载流子的影响，重点研究纵向NPN 三极管（VNPN）的激光辐照效应。光照强度较小时，只有集电结反偏，而发射结处的光生电动势不足以抵消发射结的内建电势，发射结尚未开启，器件工作在以集电结为主的二极管模式；光照强度增加时，发射结逐渐开启，器件工作在三极管模式；光照强度进一步增大，由于外部限流电阻的作用，集电极电流达到饱和，器件工作在以发射结为主的二极管模式。因此，随着光照强度的增加，VNPN 器件的激光辐射效应经历三个阶段，其响应曲线呈非线性变化。改变VNPN 的尺寸和脉冲激光的参数，会影响器件进入三极管模式的临界点，改变非线性响应的触发光照强度，体现了器件对激光辐照效应的敏感性。

关键词: 激光辐照效应, 半导体器件, 初始光生电流, 非线性

Abstract: The laser irradiation effect of vertical NPN transistor(VNPN)is mainly studied by simulating the influence of pulsed laser on photo-generated carriers of semiconductor devices.When the light intensity is small,only collector junction is in the reverse bias state,and the photo-generated electrodynamic potential is not enough to offset the built-in potential at the emitter junction.The emitter junction can not turn on yet,and the device operates in the diode mode based on the collector junction.With the increase of light intensity,the emitter junction gradually turns on,and the device operates in the NPN transistor mode.With the further increase of light intensity,due to the effect of external current-limiting resistance,the collector current reaches saturation,and the device operates in the diode mode based on the emitter junction.Therefore,with the increase of light intensity,the laser irradiation effect of VNPN transistor goes through three stages,and the response curve is nonlinear.Changing the size of the VNPN transistor and the parameters of the pulse laser will affect the critical point when the device enters the transistor mode and change the triggering light intensity of nonlinear response,which reflects the sensitivity of the device to the laser irradiation effect.

Key words: laser irradiation effect, semiconductor devices, initial photocurrent, nonlinear

中图分类号:

TN306

左慧玲，高吴昊，刘承芳，夏云，孙鹏，陈万军. VNPN 激光辐射效应模拟分析[J]. 电子与封装, 2019, 19(6): 041 -46.

ZUO Huiling,GAO Wuhao,LIU Chengfang,XIA Yun,SUN Peng,CHEN Wanjun. Simulation Analysis of Laser Irradiation Effect of VNPN Transistor[J]. Electronics & Packaging, 2019, 19(6): 041 -46.

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[2]	陈晓青, 吕　伟. 宽带发射组件相位线性度改善技术研究[J]. 电子与封装, 2018, 18(9): 29-32.

中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

VNPN 激光辐射效应模拟分析

Simulation Analysis of Laser Irradiation Effect of VNPN Transistor

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