中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

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电子与封装 ›› 2018, Vol. 18 ›› Issue (9): 45 -48. doi: 10.16257/j.cnki.1681-1070.2018.0104

• 微电子制造与可靠性 • 上一篇    

MTM反熔丝薄膜单项工艺DOE试验设计开发方法

郑若成,曾庆平,吴素贞,王印权,吴建伟,徐海铭,洪根深   

  1. 中国电子科技集团公司第五十八研究所,江苏 无锡 214035
  • 收稿日期:2018-04-08 出版日期:2018-09-20 发布日期:2018-09-20
  • 作者简介:郑若成(1971—),男,湖北监利人,硕士学历,高级工程师,1997年毕业于武汉大学物理系半导体专业,现从事抗辐射工艺技术研究。

The Design of Experiment (DOE) Method for MTM Anti-fuse Film Process Development

ZHENG Ruocheng, ZENG Qingping, WU Suzhen, WANG Yinquan, WU Jianwei, XU Haiming, HONG Genshen   

  1. China Electronics Technology Group Corporation No.58 Research Institute, Wuxi 214072, China
  • Received:2018-04-08 Online:2018-09-20 Published:2018-09-20

摘要: MTM(Metal To Metal)反熔丝薄膜工艺是反熔丝工艺的关键技术。介绍了MTM反熔丝薄膜单项工艺开发采用的DOE(Design Of Experiment)试验方法。基于CVD(Chemical Vapor Deposition)工艺,通过对射频RF、气体1流量以及基座间距进行DOE试验设计,以厚度均匀性、折射率以及应力等工艺参数响应,并通过容宽验证,完成了反熔丝薄膜主要参数的工艺菜单开发。主要提供一种采用DOE试验设计进行单项工艺开发的方法,为科研生产工作中各种关键单项工艺开发提供参考和借鉴。

关键词: 单项工艺, 反熔丝薄膜, DOE试验设计方法

Abstract: The Metal to Metal (MTM) anti-fuse film is the key process of MTM device. This paper introduces a DOE method for the development of MTM film process. In this DOE experiment based on CVD process equipment, RF power, reaction gas 1 flow and the spacing is input factor, and the MTM film thickness uniformity, refractive index and stress is output response. The MTM film process menu was developed successfully and process window was verified. This paper mainly provides a DOE method which is a example for the development of various key single process in the scientific research and production work.

Key words: single process , MTM anti-fuse film, DOE method

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