中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

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电子与封装 ›› 2021, Vol. 21 ›› Issue (8): 080403 . doi: 10.16257/j.cnki.1681-1070.2021.0812

• 微电子制造与可靠性 • 上一篇    下一篇

大功率高性能SiP的电热耦合分析

张琦;曾燕萍;袁伟星;张景辉   

  1. 中科芯集成电路有限公司,江苏 无锡 214072
  • 收稿日期:2021-01-18 出版日期:2021-08-11 发布日期:2021-03-15
  • 作者简介:张琦(1995—),男,江苏常州人,硕士,毕业于南京邮电大学,现从事芯片电热耦合分析工作。

Electrical-thermalCo-Analysis Based on High-Power and Superior-Performance SiP

ZHANG Qi, ZENG Yanping, YUAN Weixing, ZHANG Jinghui   

  1. China Key System & IntegratedCircuit Co., Ltd., Wuxi 214072, China
  • Received:2021-01-18 Online:2021-08-11 Published:2021-03-15

摘要: 随着系统级封装(System-in-Package,SiP)中器件数量和功率密度的急剧增加,精确的热分析与电分析成为设计关键点。仿真时采用电与热数据交互的方法,实现功率高达90.6 W高性能SiP的电热迭代分析。相较于单一的热分析和电分析,考虑电热耦合后SiP最高温度上升6.34 %,用电端电源引脚处实际电压下降5.7 %,电热耦合分析为大功率高性能SiP的可靠性设计提供一种有效的评估方法。

关键词: 系统级封装, 电热耦合分析, 电源压降

Abstract: With the rapid increase in the number of devices and power density in System-in-Package (SiP), accurate thermal analysis and electrical analysis have become key design elements. The method of electrical and thermal data interaction is used in the simulation to realize the iterative of electrical-thermal analysis of superior-performance SiP that power up to 90.6 W. Compared with single thermal analysis and electrical analysis, the maximum SiP temperature rises by 6.34 % and the actual voltage at the power supply pin of the power terminal drops by 5.7 % after considering electrical-thermal coupling. Electrical-thermal co-analysis provides an effective evaluation method for the reliability design of high-power and superior-performance SiP.

Key words: system-in-package, electrical-thermalco-analysis, IR-drop

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