短沟MOS器件GIDL漏电的改善

导航

顾　祥, 陈　天, 洪根深, 赵文彬

The Improvement of Gate-Induced-Drain-leakage(GIDL) Current in Short-channel MOSFET

GU Xiang, CHENG Tian, HONG Genshen, ZHAO Wenbin

电子与封装 . 2018, (6): 38 -41 . DOI: 10.16257/j.cnki.1681-1070.2018.0068