90nm浮栅型P-FLASH器件总剂量电离辐射效应研究
朱少立，汤偲愉，刘国柱，曹立超，洪根深，吴建伟，郑若成
Total Ionizing Radiation Effects of Floating Gate P-Channel FLASH Cell for 90 nm Technology
ZHU Shaoli, TANG Siyu, LIU Guozhu, CAO Lichao, HONG Genshen, WU Jianwei, ZHENG Ruocheng
电子与封装
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2018, (8): 36
-40
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DOI: 10.16257/j.cnki.1681-1070.2018.0090
