基于248 nm光刻机工艺的高性能0.15 μm GaAs LN pHEMT

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章军云，王溯源，林罡，黄念宁

High Performance 0.15 μm GaAs LN pHEMT Based on 248 nm Lithography

ZHANG Junyun,WANG Suyuan,LIN Gang,HUANG Nianning

电子与封装 . 2018, (11): 36 -39 . DOI: 10.16257/j.cnki.1681-1070.2018.0125