埋氧离子注入对P型部分耗尽SOI电学与低频噪声的影响
陈海波1，刘 远2,3，吴建伟1，恩云飞2
Dependence of Ion Implantation on the Electrical Characteristics and Low Frequency Noise in the P-Type PD-SOI Devices
CHEN Haibo1,LIU Yuan2,3,WU Jianwei1,EN Yunfei2
电子与封装
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2017, (10): 36
-41
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DOI: 10.16257/j.cnki.1681-1070.2017.0123
