关键词: 氮化镓高电子迁移率晶体管, 内匹配, 功率放大器, C波段

Abstract: Based on the AlGaN/GaN HEMT process, the large gate-width GaN high electron mobility transistor (HEMT) was fabricated. The input/output impedances have been extracted by load-pull measurement and modeling technique. L-C networks were firstly designed to improve the input and output impedances of the transistor, and then the wideband power combiner and divider were designed by using series sections of micro-strip lines, also the stable network has been included, finally the 50 Ω input/output impedance matching has been realized. The high power internally matched power device was combined by four paralleled GaN HEMT dies, the total gate-width is 4 mm×16 mm. Under the drain voltage of 50 V and the pulse condition (1 ms, 10%), during the operation frequency band of 5.3 GHz to 5.9 GHz, the output power exceed 56 dBm, and highest is about 56.5 dBm，and within the whole band, PAE is more than 48.2%，and the power gain is large than 12 dB.

Key words: GaNHEMT, internal matching, power amplifier, C-band