中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

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电子与封装 ›› 2024, Vol. 24 ›› Issue (1): 010402 . doi: 10.16257/j.cnki.1681-1070.2024.0005

• 材料、器件与工艺 • 上一篇    下一篇

ASM E2000硅外延片异常背圈现象研究与分析

徐卫东;肖健;何晶;袁夫通   

  1. 南京国盛电子有限公司,南京 ?211111
  • 收稿日期:2023-05-29 出版日期:2024-01-15 发布日期:2024-01-15
  • 作者简介:徐卫东(1989—),男,江苏南京人,本科,工程师,主要从事半导体材料、硅外延设备的技术研发工作。

Research and Analysis of Abnormal Back-Ring Phenomena in ASM E2000 Silicon Epitaxial Wafers

XU Weidong, XIAO Jian, HE Jing, YUAN Futong   

  1. Nanjing GuoshengElectronics Co., Ltd., Nanjing 211111, China
  • Received:2023-05-29 Online:2024-01-15 Published:2024-01-15

摘要: ASM E2000外延炉在生产硅外延片的过程中,晶圆背面有时会出现异常背圈的现象,包括背圈大小异常、背圈形状异常、背圈偏心等。经研究发现,背圈现象只会在非二氧化硅背封的晶圆上出现。针对异常背圈的产生,进行了滑片、气流、温度、时间等相关参数的实验验证,得到背圈形成的原因及异常背圈产生的原因。晶圆经900 ℃烘烤60 s就会形成背圈,这是外延过程中的正常现象,但是不规则的背圈通常伴随着其他外延工艺参数的同步变差,异常背圈可以通过调整工艺参数、设备滑片、跳片以及更换石墨件来解决。

关键词: 硅外延缺陷, 背圈, 晶圆背圈, ASME2000外延炉

Abstract: During the production of silicon epitaxial wafers in the ASM E2000 epitaxial furnace, abnormal back-ring phenomena sometimes appear on the backside of wafers, including abnormal back-ring size, abnormal back-ring shape, and back-ring eccentricity. It is found that back-ring phenomena only occurs on wafers with non-silicon dioxide back seals. For the generation of abnormal back-ring, experimental verification of relevant parameters such as slide, airflow, temperature and time is carried out to obtain the reasons for the formation of back-ring and the reasons for the generation of abnormal back-ring. Wafers will form the back-ring after baking at 900 ℃ for 60 s, which is a normal phenomenon in the epitaxial process, but the irregular back-ring is usually accompanied by the synchronization deterioration of other epitaxial process parameters. The abnormal back-ring can be solved by adjusting the process parameters, equipment slips, skips, and the replacement of graphite parts.

Key words: silicon epitaxial defects, back-ring, wafer back-ring, ASM E2000 epitaxial furnace

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