中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

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电子与封装 ›› 2024, Vol. 24 ›› Issue (5): 050401 . doi: 10.16257/j.cnki.1681-1070.2024.0051

• 材料、器件与工艺 • 上一篇    下一篇

一种抗辐射Trench型N 30 V MOSFET器件设计

廖远宝,谢雅晴   

  1. 中国电子科技集团公司第五十八研究所,江苏 无锡? 214035
  • 收稿日期:2023-12-05 出版日期:2024-05-27 发布日期:2024-05-27
  • 作者简介:廖远宝(1983—),男,安徽六安人,硕士,工程师,现主要从事半导体功率器件技术研究工作。

Design of a Radiation Resistant Trench N 30 V MOSFET Device

LIAO Yuanbao, XIE Yaqing   

  1. China Electronics Technology GroupCorporation No.58 Research Institute,Wuxi 214035, China
  • Received:2023-12-05 Online:2024-05-27 Published:2024-05-27

摘要: 由于Trench结构在降低元胞单元尺寸、提升沟道密度和消除JFET区电阻等方面的优势,Trench型MOSFET已广泛应用于低压产品领域。在研究抗辐射机理和抗辐射加固技术的基础上,设计了一款新型抗辐射Trench型N 30 V MOSFET器件。实验结果显示,产品击穿电压典型值达42 V,特征导通电阻为51 mΩ·mm2。在60Co γ射线100 krad(Si)条件下,器件阈值电压漂移仅为-0.3 V,漏源漏电流从34 nA仅上升到60 nA。采用能量为2006 MeV、硅中射程为116 μm、线性能量传输(LET)值为75.4 MeV·cm2/mg的118Ta离子垂直入射该器件,未发生单粒子事件。

关键词: 总剂量, 单粒子烧毁, 单粒子栅穿, MOSFET, Trench

Abstract: Due to the Trench structure’s advantages of reducing cell pitch, increasing the channel density and delimiting JFET resistance, Trench MOSFET has been widely used in low voltage products. Based on the study of the radiation resistance mechanism and radiation harden technology, a novel Trench N 30 V MOSFET device with radiation resistance is proposed. The experimental results show that the device has typical breakdown voltage of 42 V and specific on-resistance of 51 mΩ·mm2. The shift of threshold voltage is only -0.3 V, and the current of drain to source is from 34 nA to 60 nA under 60Co γ-ray of 100 krad(Si). The single event phenomena does not happen in the device with 118Ta ions incident vertically at an energy of 2006 MeV, a range of 116 μm and a linear energy transfer (LET) value of 75.4 MeV·cm2/mg in silicon material.

Key words: total ionizing dose, single event burnout, single event gate rupture, MOSFET, Trench

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