关键词: 无源双平衡混频器, 宽带, 单片微波集成电路

Abstract: An 18-40 GHz passive double balanced mixer is designed based on 0.15 μm GaAs pseudomorphic high electron mobility transistor (pHEMT) process. The mixer adopts a mixing ring composed of Schottky diodes and a triple-coupled line Marchand Balun to improve the working bandwidth and reduce the chip size. When the power of the local oscillator (LO) is 14 dBm and the intermediate frequency (IF) is 100 MHz, the typical parameter values of the flow test at room temperature are in the LO/RF band of 18-40 GHz in the up- and down-conversion modes, with an in-band conversion loss of -7 dB, the power value of the 1 dB compression point of 10 dBm, and an isolation degree of -25 dB from the LO to RF ports while the rest of ports have excellent isolation. The IF covers the frequency of DC-20 GHz, and the chip size is 1.63 mm×0.97 mm.

Key words: passive double balanced mixer, broadband, monolithic microwave integrated circuit