关键词: 自旋转移力矩磁随机存储器, 磁性隧道结, 数据保持, 存储器测试

Abstract: The basic storage unit structure of spin-transfer torque magnetic random access memory (STT-MRAM) is magnetic tunnel junction (MTJ). The thermal stability of this unit weakens as the temperature increases. Due to this characteristic of the MTJ, the traditional activation energy calculation model cannot be directly applied to test the high-temperature data retention characteristics of STT-MRAM. Therefore, research on the data retention characteristics of STT-MRAM requires exploration of alternative parameters to replace the activation energy. For this purpose, a testing system based on the Xilinx Kintex-7 series FPGA is constructed to conduct data retention experiments at multiple temperatures. Ultimately, a parameter called the thermal stability factor is fitted to replace the activation energy and measure the data retention capability of STT-MRAM. This multi-temperature data fitting method of the thermal stability factor can effectively evaluate the data retention capability of STT-MRAM devices.

Key words: spin-transfer torque magnetic random access memory, magnetic tunnel junction, data retention, memory testing