基于TSV的三维集成系统电热耦合仿真设计

doi:10.16257/j.cnki.1681-1070.2024.0138

摘要/Abstract

摘要： 三维集成系统利用垂直堆叠技术，实现高性能与低功耗，其中硅通孔（TSV）技术是三维互连成功实施的关键。TSV技术缩短互连距离，提升信号传输效率和电磁兼容性，但同时引发电热耦合问题，威胁三维集成电路性能的进一步提升。综述了基于TSV的三维集成电路中电热耦合现象的仿真设计进展，详细介绍了电气和热仿真设计方法，并探究了电热耦合问题的潜在影响及缓解策略。为理解和应对三维集成系统中的电热耦合挑战提供了系统的分析，并对未来研究方向提供了指导。

关键词: 三维集成系统, 硅通孔, 电热耦合

Abstract: Three-dimensional integrated system utilizes vertical stacking technology to achieve high performance and low power consumption, in which through-silicon via (TSV) technology is key to the successful implementation of three-dimensional interconnects. TSV technology shortens the interconnect distance, enhances signal transmission efficiency and electromagnetic compatibility, but it also leads to electro-thermal coupling issues, threatening further performance improvement of three-dimensional integrated circuits. Advances in the simulation design of electro-thermal coupling phenomena in three-dimensional integrated circuits based on TSV are summarized, the electrical and thermal simulation design methods are described? in detail, and the potential impacts and mitigation strategies for electro-thermal coupling issues are explored. A systematic analysis is provided to understand and address the challenges of electro-thermal coupling in three-dimensional integrated systems, and guidance is provided for future research directions.

Key words: three-dimensional integrated system, through-silicon via, electro-thermal coupling

中图分类号:

TN405.97

王九如,朱智源. 基于TSV的三维集成系统电热耦合仿真设计[J]. 电子与封装, 2024, 24(6): 060113 .

WANG Jiuru, ZHU Zhiyuan. Electro-Thermal Coupling Simulation Design of 3D Integrated System Based on TSV[J]. Electronics & Packaging, 2024, 24(6): 060113 .

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