超高压碳化硅N沟道IGBT器件的设计与制造<sup>*</sup>

导航

杨晓磊;李士颜;赵志飞;李赟;黄润华;柏松

Design and Fabrication ofUltra-High Voltage SiC N-Channel IGBTs

YANG Xiaolei, LI Shiyan, ZHAO Zhifei, LI Yun, HUANG Runhua, BAI Song

电子与封装 . 2022, (4): 40102 . DOI: 10.16257/j.cnki.1681-1070.2022.0413