中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

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电子与封装 ›› 2016, Vol. 16 ›› Issue (5): 31 -34. doi: 10.16257/j.cnki.1681-1070.2016.0061

• 微电子制造与可靠性 • 上一篇    下一篇

一种NiO薄膜的新型制备方法及其应用

叶珂,乔明   

  1. 电子科技大学电子薄膜与集成器件国家重点实验室,成都 610054
  • 收稿日期:2016-01-12 出版日期:2016-05-20 发布日期:2016-05-20
  • 作者简介:叶珂(1992—),女,湖北仙桃人,硕士研究生,主要研究方向为功率器件设计及氧化物半导体的制备。

A New Method to Fabricate NiO Thin Films and Its Application

YE Ke,QIAO Ming   

  1. State Key Laboratory of Electronic Thin Films and Integrated Device,University of Electronic Science and Technology of China,Chengdu,610054,China
  • Received:2016-01-12 Online:2016-05-20 Published:2016-05-20

摘要: 利用热氧化法,在紫外线光源催化作用下,在N型硅衬底上沉积氧化镍(NiO)薄膜,制备具有半导体特性的NiO/Si异质结二极管。使用JASCO NRS-3100测量薄膜拉曼散射频谱,分析不同氧化时间、不同紫外线光源、不同退火条件对NiO薄膜性能的影响。实验结果表明:氧化时间为60 min时,金属Ni能够充分氧化;含臭氧水银灯比金属卤化物灯更有助于金属Ni的氧化反应;氮气下退火30 min,有助于消除晶格损伤,改善薄膜特性。通过Phillips X'Pert衍射仪分析NiO薄膜的晶体结构,Keysight B1500A半导体参数测量仪测量NiO/Si二极管的I-V特性,当二极管两端电压分别为2 V和-2 V时,电流密度相差3个数量级,表现出良好的整流特性。

关键词: 紫外线氧化, NiO薄膜, NiO/Si异质结二极管

Abstract: Thin films of NiO were deposited on silicon substrates by thermal oxidation with ultraviolet(UV)light as catalyst.In this way a NiO/Si heterojunction diode was fabricated.With the variation of oxidation time,UV lamps,and annealing conditions,the Raman spectroscopy of different NiO thin films were analyzed using JASCO NRS-3100.The results show that when the oxidation time is 60 min,metallic Ni can be completely oxidized and that the oxidation rate of Hg-ozone lamp is higher than that of Metal-halide lamp.Also annealing in nitrogen for 30min after oxidation contributes to eliminating lattice damage,thus improving the properties of NiO thin films.X-ray diffraction was carried out to study the crystallinity using a Phillips X'Pert diffractometer.The I-V characteristic of the NiO/Si diode was measured by Keysight B1500A semiconductor tester.The current densities at 2 V and-2 V were different by three orders of magnitude,showing good rectification.

Key words: ultraviolet(UV)oxidation, NiO thin films, NiO/Si diode

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