关键词: 绝缘体上硅, LIGBT, PLDMOS, 共享Buffer

Abstract: The SOI(Silicon-On-Insulator)LIGBT(lateral insulated gate bipolar transistor)and PLDMOS(lateral double-diffused MOS),which based the shared masks,are presented in this paper.The proposed process using Shared-Buffer design during the fabrication,which reduces 2 mask layers and 2 steps compared to the conventional process.The properties of the buffer region surrounding the drain terminal of devices affect the device performance significantly.Experimental and numerical simulation results that device with Shared-Buffercan achieves equivalent performance as original design through process and layout optimization.

Key words: SOI, LIGBT, PLDMOS, shared-buffer