关键词: 宽高压范围, 沟道调制效应, 加速电容, 分时驱动

Abstract: Traditional driver is made of series inverters which is difficult to be both transmitting fast and driving strongly. We design a high speed MOSFET driver for improving the synthetical performance. Simulation result shows that it can work in 18 V voltage and can charge the 10000 pF capacitor in 60 ns. The peak current can reach 4 A at least. Through the circuit test after taping out on the process line of 0.5 μm BCD, the result of which shows the high speed MOSFET driver has achieved the expected changing speed and stable performance.

Key words: wide voltage, channel lengthmodulation, speed-up capacitor, time-sharing drive