GaN单片功率集成电路研究进展*

doi:10.16257/j.cnki.1681-1070.2021.0212

摘要/Abstract

摘要： GaN HEMT器件具有工作频率高、导通损耗小等优点，已经开始广泛应用在多种高频、高效功率转换器中，而拥有更高集成度的全GaN单片集成电路可进一步提高基于GaN HEMT器件功率变换器的性能。介绍了不同类型的全GaN集成工艺平台以及GaN功能子电路的研究进展，并对全GaN单片集成功率IC的研究现状进行了综述。

关键词: AlGaN/GaN HEMT, 全氮化镓, 变换器IC, 单片集成, 功率变换

Abstract: GaN HEMT devices, which have excellent features such as high breakdown voltage and low on-resistance, have been widely applied in high voltage, high frequency and high efficiency power converters. Higher integration of all-GaN monolithic IC can further advance the performance of power converters based on GaN HEMT. This article introduces several all-GaN integration platforms and basic GaN functional subcircuits, then the research status of all-GaN monolithic integrated power converter are reviewed.

Key words: AlGaN/GaNHEMT, all-GaN, converterIC, monolithicintegration, powerconversion

中图分类号:

TN405

赖静雪, 陈万军, 孙瑞泽, 刘超, 张波. GaN单片功率集成电路研究进展^*[J]. 电子与封装, 2021, 21(2): 020103 .

LAI Jingxue, CHEN Wanjun, SUN Ruize, LIU Chao, ZHANG Bo. Development of GaN Monolithic Power Integrated Circuits[J]. Electronics & Packaging, 2021, 21(2): 020103 .

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中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

GaN单片功率集成电路研究进展^*

Development of GaN Monolithic Power Integrated Circuits

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