高带宽存储器的技术演进和测试挑战*

doi:10.16257/j.cnki.1681-1070.2023.0012

电子与封装 ›› 2023, Vol. 23 ›› Issue (2): 020205 . doi: 10.16257/j.cnki.1681-1070.2023.0012

高带宽存储器的技术演进和测试挑战^*

陈煜海;余永涛;刘天照;刘焱;罗军;王小强

工业和信息化部电子第五研究所，广州 511300

收稿日期:2022-05-23 发布日期:2022-12-12
作者简介:陈煜海（1991—），男，广东广州人，硕士，工程师，主要从事半导体器件检测与可靠性方面的研究。

Technology Evolution and Testing Challenges of High Bandwidth Memory

CHEN Yuhai, YU Yongtao, LIU Tianzhao, LIU Yan, LUO Jun, WANG Xiaoqiang

The Fifth Electronics Research Institute ofMinistry of Industry and Information Technology,Guangzhou 511300, China

Received:2022-05-23 Published:2022-12-12

摘要/Abstract

摘要： 高带宽存储器（HBM）是一种采用三维堆叠和硅通孔技术的超高宽带、低功耗的新型动态随机存取存储器（DRAM），主要应用在高性能计算处理器、人工智能计算加速卡、高端专业显卡等高性能计算领域。国际电子元件工业联合会（JEDEC）先后发布了3代HBM技术标准，并在2022年1月发布了第四代JESD238HBM3 DRAM技术标准，为新一代高带宽内存指定了发展方向。系统梳理了HBM技术标准的发展，介绍了HBM技术在输入输出接口速度、带宽和存储容量方面的突破，结合HBM的技术特点，研究分析了HBM晶圆级堆叠芯片测试技术及其面临的挑战。

关键词: 高带宽存储器, 三维集成电路, 堆叠芯片测试

Abstract: High bandwidth memory (HBM) is an emerging type of dynamic random access memory (DRAM) with ultra-high bandwidth and low power consumption based on 3D stacking and through Si vias technology. HBM is mainly used in high-performance computing applications such as high-performance computing processors, artificial intelligence computing acceleration cards, and high-end professional graphics cards. The Joint Electron Device Engineering Council (JEDEC) has released three generations of HBM technology standard. In January 2022, the fourth generation of the JESD238 HBM3 DRAMstandard was released, specifying the direction for the next generation of highbandwidth memory.The developments of HBM technology are systematically reviewed, and the HBM breakthroughs of I/O data rate, bandwidth, and memory capacity are presented. Combined with the technical characteristics of HBM, testing techniques and challenges in wafer level are described for HBM stacked dies.

Key words: highband width memory, 3D IC, stacked die test

中图分类号:

TN47

陈煜海;余永涛;刘天照;刘焱;罗军;王小强. 高带宽存储器的技术演进和测试挑战^*[J]. 电子与封装, 2023, 23(2): 020205 .

CHEN Yuhai, YU Yongtao, LIU Tianzhao, LIU Yan, LUO Jun, WANG Xiaoqiang. Technology Evolution and Testing Challenges of High Bandwidth Memory[J]. Electronics & Packaging, 2023, 23(2): 020205 .

参考文献

[1] DONG U L, KIM K W, KIM K W, et al. A 1.2V 8Gb 8-channel 128 GB/s high-bandwidth memory (HBM) stacked DRAM with effective I/O test circuits[J]. IEEE Journal of Solid-State Circuits, 2015, 50(1):191-203.
[2] JUN H, CHO J, LEE K, et al. HBM (high bandwidth memory) DRAM technology and architecture[C]// 2017 IEEE International Memory Workshop (IMW). May 14-17, 2017, Monterey, CA, USA: IEEE, 2017: 16947916.
[3] 姚玉良, 钱宇, 施得君. HBM和HMC技术研究[J]. 高性能计算技术, 2015,4(2):8-12.
[4] JEDEC Solid State Technology Association. High bandwidth memory (HBM) DRAM: JESD235[S]. Arlington: JEDEC Solid State Technology Association, 2013.
[5] JEDEC Solid State Technology Association. High bandwidth memory (HBM) DRAM: JESD235A[S]. Arlington: JEDEC Solid State Technology Association, 2015.
[6] JEDEC Solid State Technology Association. High bandwidth memory DRAM (HBM1,HBM2): JESD235B [S]. Arlington: JEDEC Solid State Technology Association, 2018.
[7] JEDEC Solid State Technology Association. High bandwidth memory DRAM (HBM1,HBM2): JESD235C [S]. Arlington: JEDEC Solid State Technology Association, 2020.
[8] JEDEC Solid State Technology Association. High bandwidth memory DRAM (HBM1,HBM2): JESD235D [S]. Arlington: JEDEC Solid State Technology Association, 2021.
[9] JEDEC Solid State Technology Association. High bandwidth memory (HBM3) DRAM: JESD238[S]. Arlington: JEDEC Solid State Technology Association, 2022.
[10] LEE J C, KIM J, KIM K W, et al. High bandwidth memory(HBM) with TSV technique[C]// IEEE 2016 International SoC Design Conference (ISOCC). Oct 23-26, 2016, Jeju, South Korea: IEEE, 2016: 16560700.
[11] 张显, 陈海燕, 王耀华,等. HBM访存特点分析及性能测试[J]. 舰船电子工程, 2020, 40(7):126-129.
[12] LARIMI S, SALAMI B, UNSAL O S, et al. Understanding power consumption and reliability of High-bandwidth memory with voltage underscaling[C]. Design, Automation & Test in Europe Conference & Exhibition (DATE) . Feb 1-5, 2021, Grenoble, France: IEEE, 2021: 21171983.
[13] SHILOV A. JEDEC publishes HBM2 specification as Samsung begins mass production of chip[EB/OL] (2016-10-20) [2022-05-18].https://www.anandtech.com/show/9969/jedec-publishes-hbm2-specification.
[14] WISSOLIK M, ZACHER D, VIRTEX A T, et al. UltraScale+ HBM FPGA ：A revolutionary increase in memory performance [EB/OL] (2017-6-14) [2022-05-18]. https://www.xilinx.com/products/silicon-devices/fpga/virtex-ultrascale-plus-hbm.html#documentation.
[15] SAMSUNG. HBM2 Aquabolt| DRAM规格和功能. [EB/OL] (2018-1-11) [2022-5-18]. https://semiconductor.samsung. com/cn/dram/hbm/hbm2-aquabolt.
[16] SAMSUNG. HBM2E FlashboltDRAM规格和功能. [EB/OL] (2020-2-5)[2022-5-18].https://semiconductor.samsung.com/cn/dram/hbm/HBM2E-flashbolt.
[17] SMITH R. SK Hynix announces its first HBM3 memory: 24GB stacks, clocked at up to 6.4Gbps [EB/OL] (2021-10-20) [2022-05-18]. https://www.anandtech.com/show/170222/sk-hynix-announces-its-first-hbm3-memory-24gb-stacks-at-up-to-64gbps.html.
[18] Rambus. RambusInterface IPHBM3 PHY [EB/OL] (2021-08-25)[2022-9-14].https://www.rambus.com/interface-ip/ddrn-phys/hbm3/.
[19] JUN H, NAM S, JIN H, et al. High-bandwidth memory (HBM) test challenges and solutions[J]. IEEE Design & Test, 2017, 34(1):15-25.
[20] LORANGER M, YAGLIOGLU O, OONK J. High performance HBM known good stack testing[J]. IEEE Design and Test, 2016, 34(1):26-34.
[21] KIM S, CHO K, PARK H,et al. Signal integrity and computing performance analysis of a processing-in-memory of high bandwidth memory(PIM-HBM) scheme[J]. IEEE Transactions on Components, Packaging and Manufacturing Technology, 2021, 11(11):1955-1970.

中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

高带宽存储器的技术演进和测试挑战^*

Technology Evolution and Testing Challenges of High Bandwidth Memory

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