中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

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电子与封装 ›› 2016, Vol. 16 ›› Issue (5): 43 -47. doi: 10.16257/j.cnki.1681-1070.2016.0064

• 微电子制造与可靠性 • 上一篇    

LCP基RF MEMS开关的工艺研究

党元兰1,赵飞1,韩磊2,徐亚新1,梁广华1,刘晓兰1,3,陈雨1,3,庄治学1,3   

  1. 1.中国电子科技集团公司第54研究所,石家庄 050081;2.东南大学MEMS教育部重点实验室,南京 210096;3.河北诺亚人力资源开发有限公司,石家庄 050035
  • 收稿日期:2016-03-04 出版日期:2016-05-20 发布日期:2016-05-20
  • 作者简介:党元兰(1962—),女,河南南阳人,毕业于武汉大学,现为中国电子科技集团公司第54研究所高级工程师,主要研究方向为微组装工艺。

Processing Study on LCP RF MEMS Switch

DANG Yuanlan1,ZHAO Fei1,HAN Lei2,XU Yaxin1,LIANG Guanghua1,LIU Xiaolan1,3,CHEN Yu1,3,ZHUANG Zhixue1,3   

  1. 1.China Electronics Technology Group Corporation No.54 Research Institution,Shijiazhuang 050081,China;
    2.Key Laboratory of MEMS of the Ministry of Education,Southeast University,Nanjing 210096,China;
    3.Hebei Noah Human Resource Development Co.Ltd.,Shijiazhuang 050035,China
  • Received:2016-03-04 Online:2016-05-20 Published:2016-05-20

摘要: 在柔性LCP基板上制备RF MEMS开关,加工难度较大,影响开关质量的因素较多。主要研究影响LCP基RF MEMS开关加工质量的主要因素,寻找工艺过程控制解决方案。通过对关键工序的试验,对加工过程中的基板清洗、LCP基板覆铜面镀涂及整平、LCP基板无铜面溅射金属膜层、LCP基板平整度保持、二氧化硅膜层生长及图形化、牺牲层加工、薄膜微桥加工、牺牲层释放等工序进行了参数优化。研制的LCP基RF MEMS开关样件频率≤20 GHz、插入损耗≤0.5 dB,回波损耗≤-20 dB,隔离度≥20 dB,驱动电压30~50 V。该加工方法对柔性基板上可动结构的制造具有一定的借鉴价值。

关键词: LCP基材, 柔性, 桥式RF MEMS开关, 薄膜微桥

Abstract: Due to the multi influences on quality of RF MEMS switch,it is difficult to fabricate the switch on flexible LCP substrate.Here,we present for the study on the key influence on LCP RF MEMS fabrication to find the processing solution.According to the experiment,the parameters of substrate cleaning,electro-plating and leveling on Cu lamination layer,metal film on LCP substrate without copper,flatness maintain during lithography,SiO2film growing and patterning,fabrication of scarified layer forming,fabrication of thin film bridge and releasing of scarified layer were optimized.LCP RF MEMS switch with frequency less than 20 GHz was fabricated,whose insertion loss is no more than 0.5 dB,return loss is no more than-20 dB,isolation is no less than 20 dB,and driving voltage is 30 V to 50 V.The method mentioned here may have successful experiences on fabrication of moving parts on flexible substrate.

Key words: LCP substrate, flexibility, bridged RF MEMS switch, thin film micro-bridge

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