中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

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电子与封装 ›› 2017, Vol. 17 ›› Issue (12): 30 -33. doi: 10.16257/j.cnki.1681-1070.2017.0145

• 电路设计 • 上一篇    下一篇

一种低温度系数高电源抑制比带隙基准

奚冬杰,杜士才   

  1. 中国电子科技集团公司第五十八研究所,江苏 无锡 214072
  • 收稿日期:2017-07-01 出版日期:2017-12-20 发布日期:2017-12-20
  • 作者简介:奚冬杰(1989—),男,江苏无锡人,硕士学历,工程师,现从事集成电路中电源管理类的研究工作。

A Low Temperature Coefficient and High PSRR Bandgap Voltage Reference Source

XI Dongjie,DU Shicai   

  1. China Electronics Technology Group Corporation No.58 Research Institute,Wuxi 214072,China
  • Received:2017-07-01 Online:2017-12-20 Published:2017-12-20

摘要: 提出了一种基于基极电流补偿的具有低温度系数和高电源抑制比的带隙基准电压源结构,通过消除三极管基极电流对基准输出电压温度系数的影响,有效降低了基准的温漂系数,同时通过自偏置电流镜结构和滤波电容提高了基准在全频段的电源抑制比(PSRR)。Cadence中利用TSMC 0.18 μm工艺进行的仿真结果表明,在-55~125℃的温度范围内,得到9.1×10-6/℃的温漂系数,低频时的电源抑制比达到-80 dB。

关键词: 基极电流补偿, 低温漂系数, 高电源抑制比

Abstract: The paper present a new kind of bandgap voltage reference source.By using base current compensation,it has a low temperature coefficient and a high PSRR.Through eliminating the transistor base current effect on the temperature coefficient of reference voltage,it effectively reduces the temperature drift coefficient of the circuit.At the same time by the using of self biased current mirror and filter capacitor,we improves the power supply rejection ratio of the circuit in full frequency.TSMC 0.18 μm process is adopted by the circuit,by the simulation result in Cadence,it shows that the temperature coefficient is 9.1×10-6/℃ and the PSRRreaches-80dBinlowfrequency.

Key words: base current compensation, low temperature coefficient, high PSRR

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