中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

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电子与封装 ›› 2017, Vol. 17 ›› Issue (3): 22 -25. doi: 10.16257/j.cnki.1681-1070.2017.0032

• 电路设计 • 上一篇    下一篇

超低温漂带隙基准电压源设计

陆 锋1,2,葛兴杰1   

  1. 1.江南大学物联网工程学院,江苏 无锡 214122;2.中国电子科技集团公司第58研究所,江苏 无锡 214072
  • 收稿日期:2016-11-01 出版日期:2017-03-20 发布日期:2017-03-20
  • 作者简介:陆 锋(1963—),男,江苏无锡人,硕士生导师,研究员级高级工程师,现从事集成电路设计与测试技术研究;葛兴杰(1989—),男,江苏泰州人,硕士研究生在读,主要研究方向为集成电路设计。

Design of Ultralow Temperature Drift Bandgap Reference Voltage Source

LU Feng1,2, GE Xingjie1   

  1. 1.College of Internet of Things,Jiangnan University,Wuxi 214122,China; 2.China Electronics Technology Group Corporation No.58 Research Institute,Wuxi 214072,China
  • Received:2016-11-01 Online:2017-03-20 Published:2017-03-20

摘要: 在对传统带隙基准电压源进行理论分析的基础上,结合当前 IC 设计中对基准电压源低温漂、高电源抑制比的要求,设计了一种超低温漂的带隙基准电压源电路。该电路带有启动电路和高阶温度补偿电路。仿真结果表明,在-55~125 ℃的温度范围内获得了 1.65×10-6/℃的温漂系数,低频时的电源抑制比达到-62 dB。

关键词: 高阶温度补偿, 低温漂系数, 高电源抑制比

Abstract: Based on the oretical analysis of traditional bandgap voltage reference, together with the combination of the requirements of low temperature drift and high power supply rejection ratio, an ultralow temperature drift bandgap reference voltage source circuit is designed. The circuit consists of a starting circuit and a high order temperature compensation circuit. The simulation results show that in the temperature range of -55~125℃, the temperature drift coefficient is 1.65×10-6/℃, and the power supply rejection ratio at low frequency is -62 dB.

Key words: high-order temperature compensation, low temperature coefficient, PSRR

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