中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

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电子与封装 ›› 2020, Vol. 20 ›› Issue (6): 060302 . doi: 10.16257/j.cnki.1681-1070.2020.0603

• 电路设计 • 上一篇    下一篇

一种宽带高隔离度的视频模拟开关设计

吴世财,李珂   

  1. 中科芯集成电路有限公司,江苏 无锡 214072
  • 接受日期:2019-12-25 出版日期:2020-06-17 发布日期:2020-03-09
  • 作者简介:吴世财(1993—),男,甘肃白银人,硕士研究生,主要研究方向为运放与模拟开关及电源类IC设计。

Design of a Wideband High Isolation Level Video Analog Switch

WU Shicai, LI Ke   

  1. China Key System & Integrated Circuit Co., Ltd., Wuxi 214072, China
  • Accepted:2019-12-25 Online:2020-06-17 Published:2020-03-09

摘要: 为了解决传统CMOS开关在高频时隔离度低的问题,提出了一种应用于视频信号传输系统的低串扰、宽带高隔离度的视频开关电路。所提出的开关由两互补T型PMOS和NMOS开关构成,实现了4 MHz的关断隔离度为-70 dB,而且带宽较高。采用0.5 μm P衬底N阱CMOS工艺,Specture仿真结果表明,输入信号在-2~2 V电压范围内,开关的-3 dB大于50 MHz,开关时间小于50 ns,动态特性好。

关键词: T型开关, 高隔离度, 带宽, 串扰

Abstract: In order to solve the low isolation of traditional CMOS switches at high frequency, a low crosstalk, wideband and high isolation level video switch circuit is proposed for video signal transmission system. The proposed switch is composed of two complementary T-type PMOS and NMOS switches, which achieves a 4 MHz turn off isolation of -70 dB and a high bandwidth. Using 0.5 μm P substrate N-well CMOS technology, the spectrum simulation results show that the input signal in the range of -2~2 V, the switch's -3 dB is greater than 50 MHz, the switch time is less than 50 ns, and the dynamic characteristics are good.

Key words: T switch, high isolation level, bandwidth, crosstalk

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