MRAM空间粒子辐射效应关键技术研究

doi:10.16257/j.cnki.1681-1070.2021.0411

摘要/Abstract

摘要： 磁性随机存储器（MRAM）以其天然的抗辐射特性逐渐成为宇航电子系统的核心元器件之一。围绕MRAM空间粒子辐射效应关键技术，对MRAM辐射效应的研究背景、物理机制、研究方法等内容进行了论述。目前对MRAM的辐射效应研究主要集中在对商用MRAM芯片的辐射性能进行辐射实验评价，评价内容主要包括质子、中子、γ射线等空间粒子对芯片存储数据翻转率的影响。借助于TEM、AFM、XRR及探针等技术对辐射前后的磁隧道结（MTJ）的界面态进行表征，探究离子辐射对MTJ内部结构的影响，揭示出辐射损伤物理机制。除了辐射实验及电镜表征外，通过创建MTJ的电路或TCAD模型，模拟外围读写电路的辐射效应，可以实现整个MRAM芯片的抗辐射性能评估，同时也可以降低重复试验的成本，提高研究效率。

关键词: 磁性随机存储器, 辐射效应, 电学表征, 器件模型, 电路仿真

Abstract: Magnetic random memory (MRAM) has gradually become one of the core components of aerospace electronic system due to its natural radiation resistance. Based on the research on the key technologies of MRAM space particle radiation effect, this paper discusses the background, physical mechanism and research methods of MRAM radiation effect. The current research on the radiation effect of MRAM is mainly focused on the radiation experimental evaluation of the radiation performance of commercial MRAM chips. The evaluation contents mainly include the influence of proton, neutron, γ ray and other spatial particles on the turnover rate of chip memory data. The interface states of the magnetic tunnel junction (MTJ) before and after radiation are characterized by means of TEM, AFM, XRR and probe techniques, and the influence of ion radiation on the internal structure of MTJ is investigated. The radiation resistance evaluation of the whole MRAM chip can be realized by creating MTJ circuit or TCAD model to simulate the radiation effect of peripheral read and write circuit in addition to radiation experiment and electron microscope characterization. At the same time, it can also reduce the cost of repeated experiments and improve the research efficiency.

Key words: magneticrandommemory, radiationeffect, electricalcharacterization, devicemodel, circuitsimulation

中图分类号:

TN306

杨茂森;周昕杰;陈瑶. MRAM空间粒子辐射效应关键技术研究[J]. 电子与封装, 2021, 21(4): 040403 .

YANG Maosen, ZHOU Xinjie, CHEN Yao. Study on the KeyTechnologies of Space Particles Radiation Effects of MRAM[J]. Electronics & Packaging, 2021, 21(4): 040403 .

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