纳米器件单粒子瞬态仿真研究*

doi:10.16257/j.cnki.1681-1070.2022.0713

电子与封装 ›› 2022, Vol. 22 ›› Issue (7): 070404 . doi: 10.16257/j.cnki.1681-1070.2022.0713

纳米器件单粒子瞬态仿真研究^*

殷亚楠¹;王玧真¹;邱一武¹;周昕杰¹;郭刚²

1.??中国电子科技集团公司第五十八研究所，江苏无锡? 214072；2. 中国原子能科学研究院，北京? 102413

收稿日期:2022-01-18 出版日期:2022-07-28 发布日期:2022-03-04
作者简介:殷亚楠（1992—），男，河南周口人，博士，高级工程师，主要研究方向为辐射效应及抗辐射设计加固。

Simulation Research on the Single Event Transient inNano-Devices

YIN Ya’nan¹, WANG Yunzhen¹, QIU Yiwu¹, ZHOU Xinjie¹, GUO Gang²

1. China Electronics Technology Group Corporation No.58 ResearchInstitute, Wuxi 214072, China; 2. China Institute of Atomic Energy, Beijing 102413, China

Received:2022-01-18 Online:2022-07-28 Published:2022-03-04

摘要/Abstract

摘要： 利用计算机辅助设计软件，研究了不同条件下28 nm体硅器件的单粒子瞬态（Single Event Transient，SET）效应，分析了不同器件间距、线性能量转移值和粒子入射角度对器件SET效应的影响。随着器件漏极间距的减小，SET脉冲幅度和脉冲宽度随之减小。与垂直入射的情况相比，倾角入射下SET脉冲幅度和宽度的减小程度更加明显，电荷共享效应更加显著。仿真结果表明，合理调节反相器相异节点的器件间距，利用器件间的电荷共享可以有效减弱重离子产生的SET脉冲，减少单粒子效应的反应截面。

关键词: 单粒子瞬态, 辐射效应仿真, 电荷共享

Abstract: The single event transient (SET) effects of 28 nm bulk silicon devices under different conditions are studied using computer aided design software. The effects of device spacing, linear energy transfer value and particle incidence angle on the SET effects are analyzed. As the device drain spacing decreases, the SET pulse amplitude and pulse width decrease. Compared with the situation of vertical incidence, the decreases of the SET pulse amplitude and pulse width are more obvious at inclined incidence, and the charge sharing effect is more significant. The simulation results show that the reasonable adjustment of the device spacing of inverter dissimilar nodes and the use of charge sharing between devices can effectively attenuate the SET pulse generated by heavy ions and reduce the reaction cross section of single event effect.

Key words: single event transient, radiationeffect simulation, charge sharing

中图分类号:

TN406

殷亚楠;王玧真;邱一武;周昕杰;郭刚. 纳米器件单粒子瞬态仿真研究^*[J]. 电子与封装, 2022, 22(7): 070404 .

YIN Ya’nan, WANG Yunzhen, QIU Yiwu, ZHOU Xinjie, GUO Gang. Simulation Research on the Single Event Transient inNano-Devices[J]. Electronics & Packaging, 2022, 22(7): 070404 .

[1]	金鑫，唐民，于庆奎，张洪伟，梅博，孙毅，唐路平. 粒子入射条件对28 nm SRAM 单元单粒子电荷共享效应影响的TCAD 仿真研究[J]. 电子与封装, 2019, 19(6): 32-40.
[2]	周昕杰，陈　瑶，花正勇，殷亚楠，郭　刚，蔡　丽. TCAD结合SPICE的单粒子效应仿真方法[J]. 电子与封装, 2019, 19(4): 32-35.
[3]	曹　靓, 田海燕, 王　栋. 一种抗单粒子瞬态辐射效应的自刷新三模冗余触发器设计[J]. 电子与封装, 2018, 18(9): 36-38.

中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

纳米器件单粒子瞬态仿真研究^*

Simulation Research on the Single Event Transient inNano-Devices

PDF

可视化

摘要/Abstract

引用本文

使用本文

参考文献

相关文章 3

编辑推荐

Metrics

本文评价