关键词: 深亚微米, SOI工艺, 自加热效应, ESD防护器件, 栅控二极管

Abstract: In the field of the integrated circuits design, the silicon on insulator (SOI) technology is used widely for the great advantage of less parasitic effects and faster speed. But the electro static discharge (ESD) protection device design becomes a big technical difficulty for the device’s structure feature and self-heating effects (SHE) of the SOI technology. When reaching the deep submicron technology node, the ESD protection device design becomes more difficult based on partially depleted SOI (PD-SOI) technology. A research was developed for improving the reliability of the deep submicron SOI technology. Associating with the device’s structure feature of the SOI technology, an ESD protection device was targeted, the device’s size and parameters were finalized, and the layout was designed optimally. A digital circuit has passed the human body model (HBM) ESD test above 4.5kV by using this design. The problem is solved efficiently of the weak robustness about the ESD protection device based on deep submicron SOI technology.

Key words: deepsubmicron, SOItechnology, self-heatingeffects, ESDprotectiondevice, lubistor