氧化镓材料与功率器件的研究进展

doi:10.16257/j.cnki.1681-1070.2023.0036

摘要/Abstract

摘要： 氧化镓（Ga₂O₃）以其禁带宽度大、击穿场强高、抗辐射能力强等优势，有望成为未来半导体电力电子领域的主力军。相比于目前常见的宽禁带半导体SiC和GaN，Ga₂O₃的Baliga品质因数更大、预期生长成本更低，在高压、大功率、高效率、小体积电子器件方面更具潜力。对Ga₂O₃外延材料、功率二极管和功率晶体管的国内外最新研究进行了概括总结，展望了Ga₂O₃在未来的应用与发展前景。

关键词: Ga₂O₃, 外延材料, 功率二极管, 功率晶体管

Abstract: Gallium oxide (Ga₂O₃) is expected to become the main force in the future semiconductor power electronics field with its advantages of large forbidden band width, high breakdown field strength and strong radiation resistance. Compared with the common wide band gap semiconductor SiC and GaN, Ga₂O₃ has advantages of superior Baliga’s figure of merit and lower cost in growth, and more potential for high voltage, high power, high efficiency, and small volume electronic devices. The latest domestic and international research on Ga₂O₃ epitaxial materials, power diodes and power transistors is summarized, and the future applications and development prospects of Ga₂O₃ are looked forward to.

Key words: Ga₂O₃, epitaxial material, powerdiode, power transistor

中图分类号:

TN303

何云龙;洪悦华;王羲琛;章舟宁;张方;李园;陆小力;郑雪峰;马晓华. 氧化镓材料与功率器件的研究进展[J]. 电子与封装, 2023, 23(1): 010107 .

HE Yunlong, HONG Yuehua, WANG Xichen,ZHANG Zhouning, ZHANG Fang, LI Yuan, LU Xiaoli, ZHENG Xuefeng,MA Xiaohua. Progress of Gallium Oxide Materials and Power Devices[J]. Electronics & Packaging, 2023, 23(1): 010107 .

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中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊