GaN基增强型HEMT器件的研究进展*

doi:10.16257/j.cnki.1681-1070.2023.0046

摘要/Abstract

摘要： 随着电力转换系统的功率密度和工作频率不断提高，需要开发性能优于传统半导体的功率器件。作为第三代半导体材料的典型代表，氮化镓（GaN）被认为是提高大功率电力系统转换效率的新一代功率器件的主要候选材料。在操作类型方面，增强型（也称为常关型）器件具有安全、能简化电路设计以及更优的电路拓扑设计等优势，在行业应用中更具吸引力。总结并对比了目前国际上主流的GaN基增强型器件的结构和制备工艺，着重介绍了基于栅凹槽结构的功率器件技术，特别是栅槽刻蚀后的界面处理、栅介质层的优化技术。围绕器件的关键指标，总结了材料外延结构、欧姆接触、场板以及钝化工艺对器件性能的影响，提出了未来可能的技术方案。

关键词: GaN, 高电子迁移率晶体管, 增强型器件, 栅槽结构

Abstract: With the continuous improvement of power density and operating frequency of power conversion systems, it is necessary to develop the power devices with better performance than the conventional semiconductors. As a typical representative of third-generation semiconductor materials, gallium nitride (GaN) is considered as the main candidate for the next-generation power devices to improve the conversion efficiency of high-power power systems. In terms of operation type, enhanced (also known as normally off) devices have the advantages of safety, ability to simplify circuit design, and better circuit topology design, making them more attractive for industry applications. The structure and fabrication process of the current international mainstream GaN-based enhanced devices are summarized and compared, The technology of power devices based on the gate groove structure is emphatically introduced, especially the interface treatment after gate groove etching, and the optimization technology of the gate dielectric layer. The influences of material epitaxial structure, ohmic contact, field plate and passivation process on device performance are summarized around the key indicators of the device, and possible technical solutions are proposed.

Key words: GaN, high electronmobility transistor, enhanced device, gate groove structure

中图分类号:

TN386.6

黄火林;孙楠. GaN基增强型HEMT器件的研究进展^*[J]. 电子与封装, 2023, 23(1): 010108 .

HUANG Huolin, SUN Nan. Research Progressof GaN-Based Enhanced HEMT Devices[J]. Electronics & Packaging, 2023, 23(1): 010108 .

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中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

GaN基增强型HEMT器件的研究进展^*

Research Progressof GaN-Based Enhanced HEMT Devices

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