中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

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电子与封装 ›› 2023, Vol. 23 ›› Issue (11): 110103 . doi: 10.16257/j.cnki.1681-1070.2023.0168

所属专题: ICTC 2023(集成电路测试大会)

• ICTC 2023(集成电路测试大会)专题 • 上一篇    下一篇

基于内建自测试电路的NAND Flash测试方法

解维坤1,2,白月芃3,季伟伟2,王厚军1   

  1. 1. 电子科技大学自动化学院,成都 610097;2. 中国电子科技集团公司第五十八研究所,江苏 无锡 214035;3. 电子科技大学深圳高等研究院,深圳 518110
  • 收稿日期:2023-09-06 出版日期:2023-11-28 发布日期:2023-11-28
  • 作者简介:解维坤(1980—),男,山东青岛人,博士研究生,高级工程师,主要研究方向为FPGA等可编程器件测试及芯粒可测性设计技术。

NAND Flash Test Method Based on Built-In Self-Test Circuit

XIE Weikun1,2, BAI Yuepeng3, JI Weiwei2, WANG Houjun1   

  1. 1.School of Automation Engineering, University ofElectronic Science and Technology of China, Chengdu 610097, China; 2. China Electronics Technology Group Corporation No. 58Research Institute, Wuxi 214035, China;3. Shenzhen Institute for Advanced Study, University of Electronic Science and Technology of China, Shenzhen 518110, China
  • Received:2023-09-06 Online:2023-11-28 Published:2023-11-28

摘要: 随着NAND Flash在存储器市场中的占比与日俱增,对NAND Flash的测试需求也越来越大。针对NAND Flash存储器中存在的故障类型进行讨论,并对现有测试算法进行分析,为提高故障覆盖率以及降低测试时间,对现有的March-like测试算法做出改进,改进算法比March-like算法的故障覆盖率提高了16.7%,测试时间减少了30%。完成存储器内建自测试(MBIST)电路设计,并设计了FPGA最小系统板并进行板级验证,结果验证了MBIST电路以及改进的测试算法的可行性。

关键词: NANDFlash, 存储器内建自测试, March-like, Flash故障类型

Abstract: With the increasing share of NAND Flash in the memory market, the demand for NAND Flash testing is also increasing. The types of faults present in NAND Flash memory are discussed, and the existing test algorithms are analyzed. In order to improve fault coverage rate and reduce test time, the March-like algorithm is ameliorated. Compared to March-like algorithm, the fault coverage rate of the improved one increases by 16.7%, and the test time is reduced by 30%.The memory built-in self-test (MBIST) circuit design is completed, and the FPGA minimum system board is built for board-level verification. The feasibility of the MBIST circuit and the test algorithm is verified.

Key words: NAND Flash, memory built-in self-test, March-like, Flash fault type

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