关键词: 双向耐高压, 人体模型, 多电源域, 全芯片ESD

Abstract: With the rapid development of CMOS process, integrated circuits with multiple power domain are becoming more and more common, and the circuit full-chip ESD design is becoming more and more complex. An ESD design technology for a 32-channel radiation-resistant bus interface circuit based on a 0.35 μm CMOS process is presented. Meanwhile, the ESD reinforcement design of the bidirectional high voltage resistant input pins improves the ESD resistance of the chip. The radiation-resistant 32-bus interface circuit passes the 4.0 kV ESD test of human body model, and the results verify the effectiveness of the design.

Key words: bidirectional high voltage resistant, human body model, multiple power domain, full-chip ESD