中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

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电子与封装 ›› 2022, Vol. 22 ›› Issue (10): 100307 . doi: 10.16257/j.cnki.1681-1070.2022.1015

• 电路与系统 • 上一篇    下一篇

一种带曲率补偿的低温漂带隙基准源设计

吴舒桐1;孔玉礼2;王祖锦1   

  1. 1. 中国电子科技集团公司第五十八研究所,江苏 无锡 ?214072;2. 中国人民解放军海军七〇一工厂,北京 100032
  • 收稿日期:2022-05-25 出版日期:2022-10-26 发布日期:2022-07-27
  • 作者简介:吴舒桐(1993—),女,江苏无锡人,硕士,工程师,主要研究方向为射频集成电路设计。

Low Temperature Drift BandgapReference Source Design with Curvature Compensation

WU Shutong1, KONG Yuli2, WANG Zujin1   

  1. 1. China Electronics Technology GroupCorporation No.58 Research Institute,Wuxi 214072, China; 2. People’sLiberation Army Navy 701 Factory,Beijing 100032, China
  • Received:2022-05-25 Online:2022-10-26 Published:2022-07-27

摘要: 为满足高速高精度射频电路要求,设计了一款新型带高温曲率补偿的低温漂、高电源抑制比的带隙基准电压源。为避免运放的失调电压对基准源精度产生影响,电路没有采用运放结构生成基准电压。利用双极型晶体管基极-发射极电压VBE的负温度特性,在高温时对基准电压进行曲率补偿,减小基准电压的温漂。电路基于180 nm BiCMOS工艺线,采用Cadence仿真验证。在-40~85 ℃温度范围内,5 V电源电压下,温度系数为5.7×10-6/℃,电源电压抑制比可达到88 dB。

关键词: 曲率补偿, 低温漂, 带隙基准, 双极型晶体管

Abstract: A new bandgap reference voltage source with low temperature drift and high power rejection ratio with high temperature curvature compensation is designed to meet the requirements of high speed, high precision RF circuits. To avoid the impact of the operational amplifier's detuning voltage on the accuracy of the reference source, the circuit does not use the operational amplifier to generate the reference voltage. Using the negative temperature characteristic of the bipolar transistor base-emitter voltage VBE to compensate for the curvature of the reference voltage at high temperatures and reduce the temperature drift of the reference voltage. The circuit based on 180 nm BiCMOS process line, verified by Cadence simulation. The temperature coefficient is 5.7×10-6/°C at 5 V supply voltage in the temperature range of -40-85 ℃, and the supply voltage rejection ratio can reach 88 dB.

Key words: curvaturecompensation, low temperature drift, bandgap reference, bipolartransistor

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