中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

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电子与封装 ›› 2018, Vol. 18 ›› Issue (11): 25 -29. doi: 10.16257/j.cnki.1681-1070.2018.0123

• 电路设计 • 上一篇    下一篇

一种曲率补偿的带隙基准电压源设计

蒋祥倩,杜西亮,毕克娜,邹丰谦   

  1. 黑龙江大学电子工程学院,哈尔滨 150000
  • 收稿日期:2018-08-06 出版日期:2018-11-20 发布日期:2018-11-20
  • 作者简介:蒋祥倩(1993—),女,黑龙江省望奎县人,黑龙江大学集成电路工程专业硕士研究生,从事集成电路工程方向的研究。

A Bandgap Reference Circuit with Curvature Compensation

JIANG Xiangqian,DU Xiliang,BI Kena,ZOU Fengqian   

  1. School of Electronnics Engineering,Heilongjiang University,Harbin 150000,China
  • Received:2018-08-06 Online:2018-11-20 Published:2018-11-20

摘要: 采用高阶补偿方法,设计了一款超低温漂的带隙电压基准,输出电压为1.2 V。该带隙基准源在传统带隙基准电压源电路的基础上,通过四输入运算放大器完成VBE和△VBE的加权相加,在运放的输出端产生和温度无关的基准电压。基于CSMC公司0.5 μm CMOS工艺,设计了电路版图,版图面积为331.795 μm×213.1 μm,在-40~100℃的温度范围内进行仿真,温度系数可达1.415×10-6/℃,输出电压导数的摆幅swing为18.04 μV/℃。

关键词: 带隙基准, 曲率补偿, 温度系数, 高阶补偿

Abstract: An ultra low temperature drift bandgap voltage reference is designed with high order compensation,and the output voltage is 1.2 V.On the basis of the traditional bandgap reference voltage source circuit,the band gap reference completes the weighted addition of the VBEand△VBEthrough the four input operational amplifier,and produces the base voltage independent of the temperature at the output end of the amplifier.Based on the 0.5 μm CMOS process,CSMC company,the layout of the circuit is designed and the area of the layout is 331.795 μm× 213.1 μm.The simulation results show that the temperature coefficient can reach 1.415×10-6/℃,the outputvoltage swing is18.04 μV/℃,in the temperature range of-40~100 ℃.

Key words: Bandgap reference, curvature compensation, temperature coefficient, high order compensation

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