基于金刚石的先进热管理技术研究进展*

doi:10.16257/j.cnki.1681-1070.2023.0071

摘要/Abstract

摘要： 以GaN为代表的新一代半导体材料具有宽禁带、高电子饱和速率、高击穿场强等优异的电学性能，使得射频、电力电子器件有了具备更高功率能力的可能，目前限制器件功率提升的主要瓶颈在于缺少与之匹配的散热手段。具有极高热导率的金刚石已成为提升器件散热能力的重要材料，学术界针对金刚石与功率器件集成的先进热管理技术已经开展了大量有益的研究与探索，但是由于金刚石具有极强的化学惰性和超高的硬度，在实际集成和工艺加工过程中，金刚石?GaN界面容易出现热性能和可靠性问题，甚至会导致器件失效。对金刚石热管理技术的研究进展和存在的问题进行深入分析，并对未来主要工作方向做了展望。

关键词: 热管理, 功率器件, 金刚石, 嵌入式冷却

Abstract: The new generation of semiconductor materials represented by GaN has excellent electrical properties, including large bandgap, high electron saturation rate and high breakdown electric field, have the potential to make the radio and power electronic devices with better power performance. More efficient cooling techniques are needed to ensure the power performance of the devices. The diamond substrate has become the ideal heat spreader because of its highly thermally conduction, and a lot of useful studies and explorations have been carried out in academic circles for the advanced thermal management technology of diamond and power device integration, but due to the strong chemical inertness and ultra-high hardness of diamond, in the actual integration and process processing process, it is easy to cause the diamond-GaN interface thermal performance and reliability problems, which can even lead to device failure. The research progress and problems ofdiamond-based thermal management technology are analyzed deeply, and an outlook on future work is provided.

Key words: thermal management, power device, diamond, embedded cooling

中图分类号:

TN305.94

杜建宇, 唐睿, 张晓宇, 杨宇驰, 张铁宾, 吕佩珏, 郑德印, 杨宇东, 张驰, 姬峰, 余怀强, 张锦文, 王玮. 基于金刚石的先进热管理技术研究进展^*[J]. 电子与封装, 2023, 23(3): 030107 .

DU Jianyu, TANG Rui, ZHANG Xiaoyu, YANG Yuchi, ZHANG Tiebin, LU Peijue, ZHENG Deyin, YANG Yudong, ZHANG Chi, JI Feng, YU Huaiqiang, ZHANG Jinwen, WANG Wei. Research Progress ofDiamond-Based Advanced Thermal Management Technology[J]. Electronics & Packaging, 2023, 23(3): 030107 .

参考文献

[1] MISHRA U K, SHEN L K, KAZIOR T E, et al. GaN-based RF power devices and amplifiers[J]. Proceedings of the IEEE, 2008, 96(2): 287-305.
[2] BAR-COHEN A, MAURER J J, SIVANANTHAN A. Near-junction microfluidic cooling for wide bandgap devices[J]. MRS Advances, 2016, 1(2): 181-195.
[3] BAR-COHEN A, MAURER J J, ALTMAN D H. Embedded cooling for wide bandgap power amplifiers: a review[J]. Journal of Electronic Packaging, 2019, 141(4): 040803.
[4]VIA G D. GaN Reliability–where we are and where we need to go[C]// CS MANTECH Conference, May 19th-22nd, 2014, Denver, Colorado, USA, 2014: 15-18.
[5] CHU K K, YUROVCHAK T, CHAO P C, et al. Thermal modeling of high power GaN-on-diamond HEMTs fabricated by low-temperature device transfer process[C]//2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 13-16 October, 2013, Monterey, CA, USA, 2013: 1-4.
[6] INYUSHKIN A V, TALDENKOV A N, RALCHENKO V G, et al. Thermal conductivity of high purity synthetic single crystal diamonds[J]. Physical Review B, 2018, 97(14): 144305.
[7] BABI? D I, DIDUCK Q, YENIGALLA P, et al. GaN-on-diamond field-effect transistors: From wafers to amplifier modules[C]//The 33rd International Convention MIPRO, 24-28 May, 2010, Opatija, Croatia, 2010: 60-66.
[8] DUMKA D C, CHOU T M, FAILI F, et al. AlGaN/GaN HEMTs on diamond substrate with over 7 W/mm output power density at 10GHz[J]. Electronics Letters, 2013, 49(20): 1298-1299.
[9] TYHACH M, ALTMAN D, BERNSTEIN S, et al. S2-T3: Next generation gallium nitride HEMTs enabled by diamond substrates[C]//2014 Lester Eastman Conference on High Performance Devices (LEC), 05-07 August 2014, Ithaca, NY, USA, 2014: 1-4.
[10] ZHOU Y, ANAYA J, POMEROY J, et al. Barrier-layer optimization for enhanced GaN-on-diamond device cooling[J]. ACS Applied Materials & Interfaces, 2017, 9(39): 34416-34422.
[11] ALOMARI M, DUSSAIGNE A, MARTIN D, et al. AlGaN/GaN HEMT on (111) single crystalline diamond[J]. Electronics Letters, 2010, 46(4): 299.
[12] VAN DREUMEL G W G, TINNEMANS P T, VAN DEN HEUVEL A A J, et al. Realising epitaxial growth of GaN on (001) diamond[J]. Journal of Applied Physics, 2011, 110(1): 013503.
[13] DUSSAIGNE A, MALINVERNI M, MARTIN D, et al. GaN grown on (111) single crystal diamond substrate by molecular beam epitaxy[J]. Journal of Crystal Growth, 2009, 311(21): 4539-4542.
[14] WEBSTER R F, CHERNS D, KUBALL M, et al. Electron microscopy of gallium nitride growth on polycrystalline diamond[J]. Semiconductor Science and Technology, 2015, 30(11): 114007.
[15] PéCZ B, TóTH L, BARNA á, et al. Structural characteristics of single crystalline GaN films grown on (111) diamond with AlN buffer[J]. Diamond and Related Materials, 2013, 34: 9-12.
[16] DUSSAIGNE A, GONSCHOREK M, MALINVERNI M, et al. High-mobility AlGaN/GaN two-dimensional electron gas heterostructure grown on (111) single crystal diamond substrate[J]. Japanese Journal of Applied Physics, 2010, 49(6R): 061001.
[17] MENDES J C, LIEHR M, LI C H. Diamond/GaN HEMTs: Where from and Where to?[J]. Materials, 2022, 15(2): 415.
[18] HAGEMAN P R, SCHERMER J J, LARSEN P K. GaN growth on single-crystal diamond substrates by metalorganic chemical vapour deposition and hydride vapour deposition[J]. Thin Solid Films, 2003, 443(1/2): 9-13.
[19] AHMED R, SIDDIQUE A, ANDERSON J, et al. Integration of GaN and diamond using epitaxial lateral overgrowth[J]. ACS Applied Materials & Interfaces, 2020, 12(35): 39397-39404.
[20] POUST B, GAMBIN V, SANDHU R, et al. Selective growth of diamond in thermal vias for GaN HEMTs[C]// 2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 13-16 October 2013, Monterey, CA, USA, 2013: 1-4.
[21] TADJER M J, ANDERSON T J, HOBART K D, et al. Reduced self-heating in AlGaN/GaN HEMTs using nanocrystalline diamond heat-spreading films[J]. IEEE Electron Device Letters, 2012, 33(1): 23-25.
[22] TADJER M J, ANDERSON T J, HOBART K D, et al. Reduced self-heating in ALGaN/GaN HEMTs using nanocrystalline diamond heat spreading films[C]//68th Device Research Conference, 21-23 June 2010, Notre Dame, IN, USA, 2010: 125-126.
[22] TADJER M J, ANDERSON T J, HOBART K D, et al. Reduced self-heating in ALGaN/GaN HEMTs using nanocrystalline diamond heat spreading films[C]//68th Device Research Conference, 2010: 125-126.[LinkOut]
[23] Fujitsu Limited, Fujitsu Laboratories Limited. Fujitsu successfully grows diamond film to boost heat dissipation efficiency of GaN HEMT[EB/OL]. (2019-12-05) [2022-12-31]https://www.fujitsu.com/global/about/resources/news/press-releases/2019/1205-01. html.
[24] ZHANG H, GUO Z X, LU Y F. Enhancement of hot spot cooling by capped diamond layer deposition for multifinger AlGaN/GaN HEMTs[J]. IEEE Transactions on Electron Devices, 2020, 67(1): 47-52.
[25] LIAU Z L, MULL D E. Wafer fusion: A novel technique for optoelectronic device fabrication and monolithic integration[J]. Applied Physics Letters, 1990, 56(8): 737-739.
[26] CHAO P C, CHU K N, DIAZ J, et al. GaN-on-diamond HEMTs with 11W/mm output power at 10GHz[J]. MRS Advances, 2016, 1(2): 147-155.
[27] LIU T T, KONG Y C, WU L S, et al. 3-inch GaN-on-diamond HEMTs with device-first transfer technology[J]. IEEE Electron Device Letters, 2017, 38(10): 1417-1420.
[28] SUGA T, MU F W. Direct bonding of GaN to diamond substrate at room temperature[C]// 2020 IEEE 70th Electronic Components and Technology Conference (ECTC), 03-30 June 2020, Orlando, FL, USA, 2020: 1328-1331.
[29] MU F W, HE R, SUGA T. Room temperature GaN-diamond bonding for high-power GaN-on-diamond devices[J]. Scripta Materialia, 2018, 150: 148-151.
[30] CHENG Z, MU F W, YATES L, et al. Interfacial thermal conductance across room-temperature-bonded GaN/diamond interfaces for GaN-on-diamond devices[J]. ACS Applied Materials & Interfaces, 2020, 12(7): 8376-8384.
[31] CHO J, LI Z J, BOZORG-GRAYELI E, et al. Improved thermal interfaces of GaN-diamond composite substrates for HEMT applications[J]. IEEE Transactions on Components, Packaging and Manufacturing Technology, 2013, 3(1): 79-85.
[32] NOCHETTO H C, JANKOWSKI N R, BAR-COHEN A. The impact of GaN/substrate thermal boundary resistance on a HEMT device[C]// Proceedings of ASME 2011 International Mechanical Engineering Congress and Exposition, November 11-17, 2011, Denver, Colorado, USA, 2012: 241-249.
[33] POMEROY J W, BERNARDONI M, DUMKA D C, et al. Low thermal resistance GaN-on-diamond transistors characterized by three-dimensional Raman thermography mapping[J]. Applied Physics Letters, 2014, 104(8): 083513.
[34] DUMKA D C, CHOU T M, JIMENEZ J L, et al. Electrical and thermal performance of AlGaN/GaN HEMTs on diamond substrate for RF applications[C]// 2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 13-16 October 2013, Monterey, CA, USA, 2013: 1-4.
[35] CHO J, WON Y, FRANCIS D, et al. Thermal interface resistance measurements for GaN-on-diamond composite substrates[C]// 2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 19-22 October 2014, La Jolla, CA, USA, 2014: 1-4.
[36] SUN H R, SIMON R B, POMEROY J W, et al. Reducing GaN-on-diamond interfacial thermal resistance for high power transistor applications[J]. Applied Physics Letters, 2015, 106(11): 111906.
[37] CHO J, FRANCIS D, ALTMAN D H, et al. Phonon conduction in GaN-diamond composite substrates[J]. Journal of Applied Physics, 2017, 121(5): 055105.
[38] YATES L, ANDERSON J, GU X, et al. Low thermal boundary resistance interfaces for GaN-on-diamond devices[J]. ACS Applied Materials & Interfaces, 2018, 10(28): 24302-24309.
[39] MU F, XU B, WANG X, et al. A novel strategy for GaN-on-diamond device with a high thermal boundary conductance[J]. Journal of Alloys and Compounds, 2022, 905: 164076.
[40] GAMBIN V, POUST B, FERIZOVIC D, et al. Impingement cooled embedded diamond multiphysics co-design[C]// 2016 15th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm), 31 May 2016 - 03 June 2016, Las Vegas, NV, USA, 2016: 1518-1529.
[41] ALTMAN D H, GUPTA A, TYHACH M. Development of a diamond microfluidics-based intra-chip cooling technology for GaN[C]// ASME 2015 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems collocated with the ASME 2015 13th International Conference on Nanochannels, Microchannels, and Minichannels, July 6-9, 2015, San Francisco, California, USA, 2015.
[42] CREAMER C T, CHU K K, CHAO P C, et al. S2-T6: Microchannel cooled, high power GaN-on-diamond MMIC[C]// 2014 Lester Eastman Conference on High Performance Devices (LEC), 05-07 August 2014, Ithaca, NY, USA, 2014: 1-5.
[43] 余怀强, 唐光庆, 桂进乐, 等. 微系统热管理技术的新发展[J]. 压电与声光, 2018, 40(6): 931-935.
[44] TADJER M J, ANDERSON T J, FEYGELSON T I, et al. Nanocrystalline diamond capped AlGaN/GaN high electron mobility transistors via a sacrificial gate process[J]. Physica Status Solidi (a), 2016, 213(4): 893-897.
[45] CHANDRAN M, ELFIMCHEV S, MICHAELSON S, et al. Fabrication of microchannels in polycrystalline diamond using pre-fabricated Si substrates[J]. Journal of Applied Physics, 2017,122(14): 145303.
[46] ALI B, LITVINYUK I V, RYBACHUK M. Femtosecond laser micromachining of diamond: Current research status, applications and challenges[J]. Carbon, 2021, 179: 209-226.
[47] YANG Q, MIAO J Y, ZHAO J Q, et al. Flow boiling of ammonia in a diamond-made microchannel heat sink for high heat flux hotspots[J]. Journal of Thermal Science, 2020, 29(5): 1333-1344.
[48] YANG Q, HUANG Y P, NIU Z T, et al. Experimental investigation on the heat transfer characteristics of multi-point heating microchannels for simulating solar cell cooling[J]. Energies, 2022, 15(15): 5315.
[49] FU J, WANG Y, WANG J, et al. Fabrication of hundreds of microns three-dimensional single crystal diamond channel along with high aspect ratio by two-step process[J]. Materials Letters, 2019, 255: 126556.
[50] QI Z, ZHENG Y, ZHU X, et al. An ultra-thick all-diamond microchannel heat sink for single-phase heat transmission efficiency enhancement[J]. Vacuum, 2020, 177: 109377.
[51] EVTIMOVA J, KULISCH W, PETKOV C, et al. Reactive ion etching of nanocrystalline diamond for the fabrication of one-dimensional nanopillars[J]. Diamond and Related Materials, 2013, 36: 58-63.
[52] FU J, LIU Z C, ZHU T F, et al. Fabrication of microchannels in single crystal diamond for microfluidic systems[J]. Microfluidics and Nanofluidics, 2018, 22(9): 92.
[53] TOROS A, KISS M, GRAZIOSI T, et al. Precision micro-mechanical components in single crystal diamond by deep reactive ion etching[J]. Microsystems & Nanoengineering, 2018, 4: 12.
[54] XIE L, ZHOU T X, ST?HR R J, et al. Crystallographic orientation dependent reactive ion etching in single crystal diamond[J]. Advanced Materials (Deerfield Beach, Fla), 2018, 30(11): 1705501.
[55] FORSBERG P, KARLSSON M. High aspect ratio optical gratings in diamond[J]. Diamond and Related Materials, 2013, 34: 19-24.
[56] KHANALILOO B, MITCHELL M, HRYCIW A C, et al. High-Q/V monolithic diamond microdisks fabricated with quasi-isotropic etching[J]. Nano Letters, 2015, 15(8): 5131-5136.
[57] ZHOU T X, ST?HR R J, YACOBY A. Scanning diamond NV center probes compatible with conventional AFM technology[J]. Applied Physics Letters, 2017, 111(16): 163106.
[58] HICKS M L, PAKPOUR-TABRIZI A C, JACKMAN R B. Diamond etching beyond 10 μm with near-zero micromasking[J]. Scientific Reports, 2019, 9(1): 15619.
[59] HO K T, MI S C, KISS M, et al. Fabrication of single crystal diamond membranes by oxygen plasma deep etching[C]// Symposium Latsis 2019 on Diamond Photonics - Physics, Technologies and Applications, 19-22 May 2019, Lausanne Switzerland, 2019: 83.
[60] RUF M, IJSPEERT M, VAN DAM S, et al. Optically coherent nitrogen-vacancy centers in micrometer-thin etched diamond membranes[J]. Nano Letters, 2019, 19(6): 3987-3992.
[61] ZHENG Y X, MUEHLE M, LAI J Y, et al. Bilayer metal etch mask strategy for deep diamond etching[J]. Journal of Vacuum Science & Technology B, 2022, 40(2): 022210.

中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

基于金刚石的先进热管理技术研究进展^*

Research Progress ofDiamond-Based Advanced Thermal Management Technology

PDF

可视化

摘要/Abstract

引用本文

使用本文

参考文献

相关文章 11

编辑推荐

Metrics

本文评价

[1]	李乐乐;肖海波;张超;王贤元;潘昭海;刘启军. 探卡对功率器件导通压降测试的影响[J]. 电子与封装, 2023, 23(6): 60202-.
[2]	袁海龙;袁毅凯;詹洪桂;成年斌;汤勇. 焊接空洞对功率器件可靠性的影响与调控^*[J]. 电子与封装, 2023, 23(6): 60203-.
[3]	牟草源;李根壮;谢文良;王启亮;吕宪义;李柳暗;邹广田. 微波等离子体化学气相沉积法制备大尺寸单晶金刚石的研究进展^*[J]. 电子与封装, 2023, 23(1): 10104-.
[4]	刘超铭;王雅宁;魏轶聃;王天琦;齐春华;张延清;马国亮;刘国柱;魏敬和;霍明学. SiC功率器件辐照效应研究进展[J]. 电子与封装, 2022, 22(6): 60101-.
[5]	曹建武, 罗宁胜, Pierre Delatte, Etienne Vanzieleghem, Rupert Burbidge. 碳化硅器件挑战现有封装技术[J]. 电子与封装, 2022, 22(2): 20102-.
[6]	杨帆, 杭春进, 田艳红. 功率器件封装用纳米浆料制备及其烧结性能研究进展^*[J]. 电子与封装, 2021, 21(3): 30201-.
[7]	鲍婕,周德金,陈珍海,宁仁霞,吴伟东,黄伟. GaN HEMT器件封装技术研究进展^*[J]. 电子与封装, 2021, 21(2): 20101-.
[8]	周斌, 陈思, 王宏跃, 付志伟, 施宜军, 杨晓锋, 曲晨冰, 时林林. 异质异构微系统集成可靠性技术综述*[J]. 电子与封装, 2021, 21(10): 100110-.
[9]	党宁,潘效飞,龚平. 智能功率模块中绝缘铝基板可靠性提升设计研究[J]. 电子与封装, 2021, 21(1): 10401-.
[10]	李明奂. 功率器件封装体填充不良分析及改进措施[J]. 电子与封装, 2019, 19(4): 6-9.
[11]	霍　炎，吴建忠. 铜片夹扣键合QFN功率器件封装技术[J]. 电子与封装, 2018, 18(7): 1-6.