先进封装铜-铜直接键合技术的研究进展*

doi:10.16257/j.cnki.1681-1070.2023.0065

摘要/Abstract

摘要： 在后摩尔时代，先进三维封装技术成为实现电子产品集成化、小型化的重要出路。应用于封装互连的传统无铅锡基钎料由于存在金属间化合物脆性、电迁移失效、制备工艺限制等问题，已不再适用于窄间距、小尺寸的封装。金属铜的电阻率低、抗电迁移性能好，其工艺制备尺寸可减小到微米级且无坍塌现象。铜?铜（Cu-Cu）直接互连结构可以实现精密制备以及在高电流密度下服役。对Cu-Cu键合材料的选择、键合工艺的特点及服役可靠性的相关研究进展进行了总结。

关键词: Cu-Cu直接键合, 先进电子封装, 表面处理, 键合工艺

Abstract: In the post-Moore-era, advanced three-dimension (3D) packaging technology has become an important way to realize the integration and miniaturization of electronic products. Because of thebrittleness of intermetallic compounds (IMCs), electromigrationfailure and the limitation of fabrication process, the traditional lead-free Sn-based solder used in packaginginterconnectionis no longer suitable for narrow spacing and small size packaging. Copper has low resistivity and good electromigration resistance, and its process size can be reduced to micron level without collapse. Copper-copper (Cu-Cu) direct interconnection structure can realize precise preparation and service under high current density.The selection of Cu-Cu bonding materials, the characteristics of bonding process and the related research progress of service reliability are summarized.

Key words: Cu-Cu direct bonding, advanced electronic packaging, surface finish, bonding process

中图分类号:

TN405.97

张明辉, 高丽茵, 刘志权, 董伟, 赵宁. 先进封装铜-铜直接键合技术的研究进展^*[J]. 电子与封装, 2023, 23(3): 030106 .

ZHANG Minghui, GAO Liyin, LIU Zhiquan, DONG Wei, ZHAO Ning. ResearchProgress of Copper-Copper Direct Bonding Technology in Advanced Packaging[J]. Electronics & Packaging, 2023, 23(3): 030106 .

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中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

先进封装铜-铜直接键合技术的研究进展^*

ResearchProgress of Copper-Copper Direct Bonding Technology in Advanced Packaging

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