关键词: 硅通孔, 填镀铜, 绝缘层, 阻挡层, 种子层

Abstract: The factors which influence the quality of Si substrate based blind via and the Cu filled through silicon via (TSV) were discussed. The basic details of fabrication of TSV which involves several process steps including blind via formation, deposition of insulation, barrier, and seed layer and via-filling were investigated. By analyzing the key techniques associated with copper electroplating process, the main fabrication conditions and parameters which should be specially controlled were acquired.

Key words: through silicon via, copper electroplating, insulation layer, barrier layer, seed layer