三维封装TSV结构热失效性分析

doi:10.16257/j.cnki.1681-1070.2021.0902

电子与封装 ›› 2021, Vol. 21 ›› Issue (9): 090201 . doi: 10.16257/j.cnki.1681-1070.2021.0902

三维封装TSV结构热失效性分析

宋培帅^1,2;何昱蓉^1,2;魏江涛¹;杨亮亮^1,2;韩国威¹;王晓东^1,2,3;杨富华^1,2

1.中国科学院半导体研究所，北京 100083；2.中国科学院大学材料与光电研究中心，北京 100049；3. 北京量子信息科学研究院，北京 100193

收稿日期:2021-01-18 发布日期:2021-04-02
作者简介:宋培帅（1993—），男，山东聊城人，博士研究生，现从事MEMS微纳加工与超小型压力传感器制造。

ThermalFailure Analysis of Three Dimensional Packaging-Through Silicon Via Structure

SONG Peishuai^1,2, HE Yurong^1,2, WEI Jiangtao¹, YANG Liangliang^1,2, HAN Guowei¹, WANG Xiaodong^1,2,3, YANG Fuhua^1,2

1. Institute ofSemiconductors, Chinese Academy of Sciences, Beijing 100083, China;2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China; 3. Beijing Academy of Quantum Information Sciences, Beijing 100193, China

Received:2021-01-18 Published:2021-04-02

摘要/Abstract

摘要： ?随着集成电路向低功耗、小体积、高集成度方向发展，二维平面集成逐渐面临挑战。硅通孔（Through Silicon Via，TSV）能够实现芯片上下垂直互连，减小引线布线长度，是三维集成技术中的关键步骤。通过有限元仿真软件（Comsol multiphysic）对TSV-Cu模型进行了热力学仿真，对比了不同电流密度下TSV-Cu的应力-应变与热膨出结果。通过热循环试验观察TSV-Cu界面形貌的变化，发现由于热失配的原因，氧化硅绝缘层与中心铜柱界面处存在不可逆的缝隙。根据有限元仿真与热循环试验，可以得到不同的工作电流会导致不同的温度分布规律，进而导致不同的应力分布与结构形变，能够为TSV结构工作环境的设定与监测提供指导。

关键词: 硅通孔, 有限元仿真, 热循环试验, 热失配

Abstract: With the development of integrated circuits to low power consumption, small size and high integration, two-dimensional planar integration is gradually facing challenges. Through silicon via (TSV) is a key step in 3D integration technology, which can realize the interconnection of chip and reduce the wiring length. The thermodynamic simulation of TSV-Cu model was carried out by using the finite element simulation software (COMSOL Multiphysic). The stress-strain and thermal expansion results of TSV-Cu under different current densities were compared. The change of TSV-Cu interface morphology was observed by thermal cycling experiment. Due to the thermal mismatch, there was an irreversible gap between the silicon oxide insulating layer and the central copper pillar. According to the finite element simulation and thermal cycle experiment, it can be concluded that different working current will lead to different temperature distribution. Then, it results in different stress distribution and structural deformation, which can provide guidance for setting and monitoring the working environment of TSV structure.

Key words: throughsiliconvia, finiteelementsimulation, thermalcyclingexperiment, thermalmismatch

中图分类号:

TN305.94

宋培帅;何昱蓉;魏江涛;杨亮亮;韩国威;王晓东;杨富华. 三维封装TSV结构热失效性分析[J]. 电子与封装, 2021, 21(9): 090201 .

SONG Peishuai, HE Yurong, WEI Jiangtao, YANG Liangliang, HAN Guowei, WANG Xiaodong, YANG Fuhua. ThermalFailure Analysis of Three Dimensional Packaging-Through Silicon Via Structure[J]. Electronics & Packaging, 2021, 21(9): 090201 .

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中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

三维封装TSV结构热失效性分析

ThermalFailure Analysis of Three Dimensional Packaging-Through Silicon Via Structure

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