SiC MOSFET伽马辐照效应及静态温度特性研究

doi:10.16257/j.cnki.1681-1070.2021.0811

电子与封装 ›› 2021, Vol. 21 ›› Issue (8): 080402 . doi: 10.16257/j.cnki.1681-1070.2021.0811

SiC MOSFET伽马辐照效应及静态温度特性研究

唐常钦^1,2;王多为^1,2;龚敏^1,2;马瑶^1,2;杨治美^1,2

1. 四川大学物理学院微电子技术四川省重点实验室，成都　610064；2. 四川大学辐射物理及技术教育部重点实验室，成都　610064

收稿日期:2021-02-03 出版日期:2021-08-11 发布日期:2021-03-03
作者简介:唐常钦（1997—），男，四川达州人，四川大学物理学院微电子学与固体电子学硕士研究生，主要研究方向为SiC半导体器件的辐照效应及可靠性分析。

Study on the Static Temperature Characteristics ofSiC MOSFET after Gamma Irradiation

TANG Changqin^{1, 2}, WANG Duowei^{1, 2}, GONG Min^{1, 2}, MA Yao^{1, 2}, YANG Zhimei^{1, 2}

1. Key Lab ofMicroelectronics Sichuan Province, Collage of Physics, Sichuan University,Chengdu 610064, China; 2. Key Laboratory of Radiation Physics and Technology of Ministry ofEducation, Sichuan University,Chengdu 610064, China

Received:2021-02-03 Online:2021-08-11 Published:2021-03-03

摘要/Abstract

摘要： 研究了SiC功率MOSFET的γ辐照总剂量效应，获得了其在不同总剂量辐照以及不同环境温度下的输出特性和转移特性，并探究了γ辐照和环境温度对阈值电压、漏极饱和电流、工作状态的影响规律。研究结果表明，栅氧化层的辐照损伤是导致SiC MOSFET性能退化的主要原因。器件的输出特性、阈值电压及工作状态受辐照剂量影响明显，经室温退火后，器件性能有一定恢复。器件静态特性随温度的变化规律不易受γ辐照影响，辐照前后其阈值电压的温度系数均约为-2.71 mV/K，表明该器件阈值电压具有较好的温度稳定性。

关键词: SiCMOSFET, 伽马辐照, 总剂量效应, 静态特性, 室温退火, 温度特性

Abstract: The total dose effect of gamma irradiation on commercial SiC MOSFET was studied. In order to investigate the fluence of gamma irradiation on static temperature characteristics of SiC MOSFET, the output characteristics and transfer characteristics of pre- and post- irradiated MOSFETs at different temperature were obtained. The results showed that the damage of the gate oxide by the irradiation was the main reason for the performance degradation of SiC MOSFET. The output characteristics, threshold voltage and working status of the device were significantly affected by the gamma irradiation. The electrical performance of the devices has been partially restored after 100-days annealing at room temperature. The variation of the static characteristics of the device with temperature was not easily affected by the irradiation. The temperature coefficient of the threshold voltage before and after the irradiation was about -2.71 mV/K, which indicated the threshold voltage of the device has good temperature stability.

Key words: SiCMOSFET, gammairradiation, totaldoseeffect, staticcharacteristics, roomtemperatureannealing, temperaturecharacteristics

中图分类号:

TN386.1

唐常钦, 王多为, 龚敏, 马瑶, 杨治美. SiC MOSFET伽马辐照效应及静态温度特性研究[J]. 电子与封装, 2021, 21(8): 080402 .

TANG Changqin, WANG Duowei, GONG Min, MA Yao, YANG Zhimei. Study on the Static Temperature Characteristics ofSiC MOSFET after Gamma Irradiation[J]. Electronics & Packaging, 2021, 21(8): 080402 .

参考文献

[1] S Y C, Z Y M, Z Y M. Analysis of the SiC irradiation resistance[J]. Journal of Xidian University, 1999, 26(6): 807-810．
[2] Y M, I H, M Y, et al. Effects of gamma-ray irradiation on cubic silicon carbide metal-oxide-semiconductor structure[J]. Journal of Applied Physics, 1991,70(3): 1309-1312.
[3] A A C, W S R, W J R. Gamma irradiation effects on 4H-SiC MOS capacitors and MOSFETs[J]. Materials Science Forum, 2006,527-529: 1063-1066.
[4] H H L, B J M. Radiation effects and hardening of MOS technology: Devices and circuits[J]. IEEE Transactions on Nuclear Science, 2003,50(3): 500-521.
[5] B J L, D C S, S E G. Space, atmospheric, and terrestrial radiation environments[J]. IEEE Transactions on Nuclear Science, 2003,50(3): 466-482.
[6] 解冰清, 毕津顺, 李博, 等. 极端低温下硅基器件和电路特性研究进展[J]. 微电子学, 2015, 45(6): 789-795.
[7] 祁金伟, 田凯, 张勇, 等. 4H-SiC平面型和沟槽型MOSFET高低温下的特性[J]. 微纳电子技术, 2020,57(8): 606-616.
[8] M K, M S, M T, et al. Impacts of gate bias and its variation on gamma-ray irradiation resistance of SiC MOSFETs[J]. Physica Status Solidi, 2017,214(4): 1600446.1-1600446.7.
[9] 薛玉雄, 曹洲, 郭祖佑, 等. 剂量率对MOSFET器件总剂量效应的影响[J]. 原子能科学技术,2008,42(5): 470-474.
[10] Z Z F, W Z, G Y Z, Carbon cluster formation and mobility degradation in 4H-SiC MOSFETs[J]. Applied Physics Letters, 2021,118: 031601.
[11] 袁菁, 龚敏, 王海云, 等. 6H-SiC表面热氧化SiO2的正电子谱研究[J]. 四川大学学报, 2010,47(2): 331-334.
[12] K Y, S L L, S I, et al. Radiation effects in SiC for nuclear structural applications[J]. Current Opinion in Solid State & Materials Science, 2012, 16(3):143-152.
[13] H D Q, Z J W, J Y P, et al. Impact of different gate biases on irradiation and annealing responses of SiC MOSFETs[J]. IEEE Transactions on Electron Devices, 2018,65(9): 3719-3724.
[14] C S Z, C C F, W T, et al. Cryogenic and high temperature performance of 4H-SiC power MOSFETs[C]// Twenty-eighth IEEE Applied Power Electronics Conference & Exposition. IEEE, 2013.
[15] 汪洋, 卢志飞, 李世强, 等. SiC MOSFET静态温度特性研究[J].电力电子技术, 2017, 51(8): 26-29.
[16] 江芙蓉, 杨树, 盛况. 碳化硅MOSFET特征参数随温度变化的比较研究[J].电源学报, 2018,16(6): 143-151.
[17] M T, Y T, M S, et al. Change in characteristics of SiC MOSFETs by gamma-ray irradiation at high temperature[C]. Trans Tech Publications, 2016,858: 860-863.
[18] 胡高宏, 张玉林, 丘明, 等. 低温下功率MOSFET的特性分析[J]. 微电子学与计算机, 2005, 22(8): 48-50.
[19] 赵闯, 郭文勇, 蔡洋, 等. 1200 V碳化硅功率MOSFET低温特性的实验表征及分析[J]. 低温与超导, 2020 (3): 6-10.

中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

SiC MOSFET伽马辐照效应及静态温度特性研究

Study on the Static Temperature Characteristics ofSiC MOSFET after Gamma Irradiation

PDF

可视化

摘要/Abstract

引用本文

使用本文

参考文献

相关文章 3

编辑推荐

Metrics

本文评价

[1]	谢儒彬，张庆东，纪旭明，吴建伟，洪根深. 抗辐射0.18 μm NMOS器件热载流子效应研究[J]. 电子与封装, 2017, 17(4): 30-33.
[2]	王印权，郑若成，徐海铭，吴素贞，洪根深. MTM反熔丝单元的辐照特性研究[J]. 电子与封装, 2017, 17(4): 34-38.
[3]	米　丹，左玲玲. 体硅CMOS集成电路抗辐射加固设计技术[J]. 电子与封装, 2016, 16(9): 40-43.