辐照源对LVMOS器件总剂量辐射电离特性的影响*

doi:10.16257/j.cnki.1681-1070.2022.0715

电子与封装 ›› 2022, Vol. 22 ›› Issue (7): 070405 . doi: 10.16257/j.cnki.1681-1070.2022.0715

辐照源对LVMOS器件总剂量辐射电离特性的影响^*

陶伟;刘国柱;宋思德;魏轶聃;赵伟

中国电子科技集团公司第五十八研究所，江苏无锡 ?214072

收稿日期:2022-04-13 出版日期:2022-07-28 发布日期:2022-05-24
作者简介:陶伟（1978—），男，江苏盐城人，硕士，高级工程师，主要研究方向为抗辐射超大规模集成电路；

Influence of IrradiationSource on Total Ionizing Dose Characteristics of LVMOS Devices

TAO Wei, LIU Guozhu, SONG Side, WEI Yidan, ZHAO Wei

The 58th Institute of China Electronics Technology Group Corporation, Wuxi 214072, China

Received:2022-04-13 Online:2022-07-28 Published:2022-05-24

摘要/Abstract

摘要： 基于0.18 μm CMOS工艺，采用浅槽隔离（STI）注入法对1.8 V LVNMOS器件进行总剂量加固，并对比分析了⁶⁰Co（315 keV）与X射线（40 keV）辐照源对LVNMOS器件总剂量特性的影响。研究结果表明，在相同偏置条件下，⁶⁰Co与X射线两种辐照源对MOS器件的辐射电离效应具有一定的差异性，前者同时具有康普顿效应和光电效应，后者是光电效应，主要是光子与内层电子作用。由LVNMOS总剂量辐照特性推测，X射线辐照源引起LVNMOS周围环境的SiO₂层中产生的电子与空穴高于⁶⁰Co。

关键词: 总剂量辐射电离, 阈值电压, 60Co, X射线

Abstract: The total ionizing dose of 1.8 V LVNMOS devices is reinforced by shallow trench isolation (STI) injection method based on 0.18 μm CMOS process, and the effects of ⁶⁰Co (315 keV) and X-ray (40 keV) irradiation sources on the total ionizing dose characteristics of LVNMOS devices are compared and analyzed. The results show that the effects of the ionizing radiation caused by ⁶⁰Co and X-ray irradiation sources on MOS devices are different under the same bias condition. The former can form both Compton effect and photoelectric effect, and the latter mainly arises of the photoelectric effect, which is from the interaction between photons and inner electrons. From the total ionizing dose characteristics of LVNMOS, it can be inferred that the electrons and holes produced in the SiO₂ layer of LVNMOS caused by X-ray irradiation source are higher than those by ⁶⁰Co.

Key words: total ionizing dose, threshold voltage, 60Co, X-ray

中图分类号:

TN306
V520.6

陶伟;刘国柱;宋思德;魏轶聃;赵伟. 辐照源对LVMOS器件总剂量辐射电离特性的影响^*[J]. 电子与封装, 2022, 22(7): 070405 .

TAO Wei, LIU Guozhu, SONG Side, WEI Yidan, ZHAO Wei. Influence of IrradiationSource on Total Ionizing Dose Characteristics of LVMOS Devices[J]. Electronics & Packaging, 2022, 22(7): 070405 .

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刘国柱（1980—），男，江苏盐城人，博士，高级工程师，主要研究方向为抗辐射超大规模集成电路。

中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

辐照源对LVMOS器件总剂量辐射电离特性的影响^*

Influence of IrradiationSource on Total Ionizing Dose Characteristics of LVMOS Devices

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