中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

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电子与封装 ›› 2023, Vol. 23 ›› Issue (10): 100401 . doi: 10.16257/j.cnki.1681-1070.2023.0125

• 材料、器件与工艺 • 上一篇    下一篇

基于基板塑封工艺的小型化宽带电调衰减器

贾玉伟,唐中强,蔡道民,薛梅,李展   

  1. 中国电子科技集团公司第十三研究所,石家庄 050051
  • 收稿日期:2023-03-28 出版日期:2023-10-31 发布日期:2023-10-31
  • 作者简介:贾玉伟(1982—),男,河北昌黎人,工程硕士,高级工程师,主要从事射频封装电路的设计开发工作。

Miniaturized Wide-Band Electronic Tuning Attenuator Based on Substrate Molding Process

JIA Yuwei, TANG Zhongqiang, CAI Daomin, XUE Mei, LI Zhan   

  1. China Electronics Technology Group Corporation No.13 Research Institute, Shijiazhuang 050051,China
  • Received:2023-03-28 Online:2023-10-31 Published:2023-10-31

摘要: 为满足自动增益控制(AGC)电路中对电调衰减器小型化的需求,采用4个P型-本征-N型(PIN)二极管构成的对称式Π型衰减网络,通过电路设计和基板塑封工艺,实现了一种小型化宽带电调衰减器。电调衰减器采用2.7V电源供电,采用1.0~5.0 V控制电压。测试结果表明,在工作频带为30~1000 MHz时,电调衰减器的最小插入损耗的绝对值小于2.9dB,其最大衰减量的绝对值大于35.0 dB,其回波损耗小于-10 dB。器件封装尺寸为3.8 mm×3.8 mm×1.0 mm,单只器件质量为38 mg。该电调衰减器满足宽频带、低插损的要求,具有小型化、高集成、轻量化的特点。

关键词: 小型化, 宽带, 电调衰减, P型-本征-N型(PIN)二极管, Π型衰减网络, 基板塑封

Abstract: To meet the demand for miniaturization of electronic tuning attenuators in automatic gain control (AGC) circuits, a miniaturized wide-band electronic tuning attenuator is realized using a symmetric Π-type attenuation networkconsisting of four P-type-intrinsic-N-type (PIN) diodes by means of circuit design and substrate molding process.The electronic tuning attenuator is powered by a 2.7 V power supply and operated with a 1.0-5.0 V control voltage.The test results show that the minimum insertion loss of the electronic tuning attenuator is less than 2.9 dB in absolute value, its maximum attenuation is more than 35.0 dBin absolute value, and its return loss is less than -10 dBwhen the operating frequency band is 30-1000 MHz.Its packaging size is 3.8 mm×3.8 mm×1.0 mm, and the single device massis 38 mg. The electronic tuning attenuator meets the requirements of broadband and low insertion loss, and has the characteristics of miniaturization, high integration, and lightweight.

Key words: miniaturization, wide-band, electronic tuning attenuation, P-type-intrinsic-N-type (PIN) diodes, Π-type attenuation network, substrate molding process

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