中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

导航

电子与封装 ›› 2022, Vol. 22 ›› Issue (3): 030305 . doi: 10.16257/j.cnki.1681-1070.2022.0308

• 电路与系统 • 上一篇    下一篇

一种低功耗高速率宽电平范围的电平转换单元

胡庆成;吴建东;万璐绪   

  1. 中科芯集成电路有限公司,江苏 无锡 214072
  • 收稿日期:2020-07-19 出版日期:2022-03-24 发布日期:2021-09-29
  • 作者简介:胡庆成(1976—),男,江苏无锡人,本科,工程师,主要从事IC电路设计。

Low Power High Speed and Wide Level Range Conversion Unit

HU Qingcheng, WU Jiandong, WAN Luxu   

  1. China Key System & Integrated Circuit Co., Ltd., Wuxi 214072, China
  • Received:2020-07-19 Online:2022-03-24 Published:2021-09-29

摘要: 现代大规模集成电路中,常常需要在不同端口之间进行数据交互,为满足不同供电电压系统之间的正常工作,需要在不同电压域之间插入电平转换单元。基于0.18 μm CMOS工艺设计了一种低功耗高速率宽电平范围的电平转换单元。基于该单元设计的四通道电平转换电路,流片测试结果表明在1.0~5.5 V范围内最高支持1 Gbps的电平转换速率。

关键词: 电平转换, 低功耗, 高速率, 宽电平范围

Abstract: In modern large-scale integrated circuits, data exchange between different ports is required. In order to meet the normal operation of different power supply voltage systems, it’s necessary to insert a level conversion unit between different voltage domains. A low power consumption with high rate data and wide level range conversion unit based on 0.18 μm CMOS process is proposed. The four channel conversion circuit based on the unit supports the highest level conversion rate of 1 Gbps in the range of 1.0-5.5 V.

Key words: levelconversion, lowpowerconsumption, highratedata, widelevelrange

中图分类号: