面向下一代GaN功率技术的超薄势垒AlGaN/GaN异质结功率器件*

doi:10.16257/j.cnki.1681-1070.2023.0021

摘要/Abstract

摘要： AlGaN/GaN异质结型功率电子器件具有高工作温度、高击穿电压、高电子迁移率等优点，在推动下一代功率器件小型化、智能化等方面具有很大的材料和系统优势。从5种实现增强型GaN基功率电子器件的方法入手，重点介绍了采用超薄势垒AlGaN(小于6 nm)/GaN异质结实现无需刻蚀AlGaN势垒层的GaN基增强型器件的物理机理和实现方法。同时介绍了在超薄势垒AlGaN/GaN异质结构上实现增强型/耗尽型绝缘栅高电子迁移率晶体管单片集成的研究进展，进一步论证了在大尺寸Si基AlGaN/GaN超薄势垒平台上同片集成射频功率放大器、整流二极管、功率三极管等器件的可行性，为Si基GaN射频器件、功率器件、驱动和控制电路的单片集成奠定了技术基础。

关键词: 氮化镓, 功率电子器件, AlGaN/GaN异质结, 超薄势垒, 增强型, 功率集成

Abstract: AlGaN/GaN heterostructure based power electronic devices have the advantages of high operating temperature, high breakdown voltage, and high electron mobility, which have great material and system advantages in promoting the miniaturization and intelligence of next-generation power devices. Five techniques are introduced for the fabrication of GaN-based enhancement-mode power electronic devices. The physical mechanism and fabrication technology of GaN-based enhancement-mode power devices without etching AlGaN barrier layer are presented based on ultrathin-barrier AlGaN (less than 6 nm) / GaN heterostructures. The research progress of monolithically integrated enhancement/depletion-mode insulated gate high electron mobility transistors on the ultrathin-barrier AlGaN/GaN heterostructures is also presented. On-chip integration feasibility of radio frequency power amplifiers, rectifier diodes, power transistors, and other devices on the large-size ultrathin-barrier AlGaN/GaN-on-Si platform is also proposed. A technical foundation for monolithic integration of GaN-based radio frequency devices, power devices, and driver and control circuits is laid.

Key words: GaN, powerelectronic devices, AlGaN/GaN heterostructure, ultrathin barrier, enhancement-mode, power integration

中图分类号:

TN323⁺.4

黄森, 张寒, 郭富强, 王鑫华, 蒋其梦, 魏珂, 刘新宇. 面向下一代GaN功率技术的超薄势垒AlGaN/GaN异质结功率器件^*[J]. 电子与封装, 2023, 23(1): 010102 .

HUANG Sen, ZHANG Han, GUO Fuqiang, WANG Xinhua, JIANG Qimeng, WEI Ke, LIU Xinyu. Ultrathin-BarrierAlGaN/GaN Heterostructure Based Power Devices Towards Next-Generation GaN PowerTechnology[J]. Electronics & Packaging, 2023, 23(1): 010102 .

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中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

面向下一代GaN功率技术的超薄势垒AlGaN/GaN异质结功率器件^*

Ultrathin-BarrierAlGaN/GaN Heterostructure Based Power Devices Towards Next-Generation GaN PowerTechnology

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