GaN基互补型逻辑电路的研究进展及挑战*

doi:10.16257/j.cnki.1681-1070.2023.0001

摘要/Abstract

摘要： 氮化镓（GaN）基异质结场效应晶体管具有工作频率高、导通损耗低等优点，已经开始广泛应用在多种高频、高效功率转换器中。为了充分发挥GaN功率器件的潜能，需要将功率开关器件和控制器、驱动等外围电路进行全GaN单片集成以减少寄生参数。互补型逻辑电路是实现集成的关键元电路之一，但其研究起步较晚。介绍了n沟道和p沟道GaN增强型器件的制备方案及互补逻辑电路的研究进展。从电学性能匹配性及稳定性出发探讨了现有互补型逻辑电路面临的关键科学问题，可以为GaN基互补型逻辑电路的研究提供参考。

关键词: GaN, 功率集成电路, 增强型器件, 互补金属-氧化物-半导体, 逻辑电路, 稳定性

Abstract: GaN-based heterojunction field effect transistors have the advantages of high operating frequency and low conduction loss, which have begun to be widely used in a variety of high frequency, high efficiency power converters. In order to fully utilize the potential of GaN power devices, the power switching devices and peripheral circuits such as controllers and drivers need to be fully GaN monolithically integrated to reduce parasitic parameters. The complementary logic circuit is one of the key elements to realize integration, but their research started late. The fabrication schemes of n-channel and p-channel GaN enhance devices and the research progress of complementary logic circuits are introduced. The key scientific problems for the existing complementary logic circuits are discussed from the perspective of electrical performance matching and stability, which can provide some reference for the research of GaN-based complementary logic circuits.

Key words: GaN, power integrated circuit, enhance device, complementary metal-oxide- semiconductor, logic circuit, stability

中图分类号:

TN432

张彤;刘树强;何亮;成绍恒;李柳暗;敖金平. GaN基互补型逻辑电路的研究进展及挑战^*[J]. 电子与封装, 2023, 23(1): 010101 .

ZHANG Tong, LIU Shuqiang, HE Liang, CHENG Shaoheng, LI Liu’an, AO Jinping. Research Progress and Challenges of GaN-BasedComplementary Logic Circuits[J]. Electronics & Packaging, 2023, 23(1): 010101 .

参考文献

[1] CHEN K J, HAEBERLEN O, LIDOW A, et al. GaN-on-Si power technology: Devices and applications[J]. IEEE Transactions on Electron Devices, 2017, 64(3): 779-795.
[2] KONG Y, ZHOU J, KONG C, et al. Monolithic integration of E/D-mode AlGaN/GaN MIS-HEMTs[J]. IEEE Electron Device Letters, 2014, 35(3): 336-338.
[3] ZHENG Z, SONG W, ZHANG L, et al. Monolithically integrated GaN ring oscillator based on high-performance complementary logic inverters[J]. IEEE Electron Device Letters, 2020, 42(1): 26-29.
[4] SUN R, LAI J, CHEN W, et al. GaN power integration for high frequency and high efficiency power applications: A review[J]. IEEE Access, 2020, 8: 15529-15542.
[5] UEMOTO Y, UEDA T, TANAKA T, et al. Recent advances of high voltage AlGaN/GaN power HFETs[C]// Gallium Nitride Materials and Devices IV, 2009.
[6] CAI Y, ZHOU Y, LAU K M, et al. Control of threshold voltage of AlGaN/GaN HEMTs by fluoride-based plasma treatment: From depletion mode to enhancement mode[J]. IEEE Transactions on Electron Devices, 2006, 53(9): 2207-2215.
[7] KAMBAYASHI H, SATOH Y, OOTOMO S, et al. Over 100 A operation normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate with high-breakdown voltage[J]. Solid-State Electronics, 2010, 54(6): 660-664.
[8] ZHANG J, HE L, LI L, et al. High-mobility normally OFF Al2O3/AlGaN/GaN MISFET with damage-free recessed-gate structure[J]. IEEE Electron Device Letters, 2018, 39(11): 1720-1723.
[9] WANG Y, WANG M, XIE B, et al. High-performance normally-off Al2O3/GaN MOSFET using a wet etching-based gate recess technique[J]. IEEE Electron Device Letters, 2013, 34(11): 1370-1372.
[10] ZHOU Q, LIU L, ZHANG A, et al. 7.6 V threshold voltage high-performance normally-off Al2O3/GaN MOSFET achieved by interface charge engineering[J]. IEEE Electron Device Letters, 2016, 37(2): 165-168.
[11] UEMOTO Y, HIKITA M, UENO H, et al. Gate injection transistor (GIT) - A normally-off AlGaN/GaN power transistor using conductivity modulation[J]. IEEE Transactions on Electron Devices, 2007, 54(12): 3393-3399.
[12] CAI Y, CHENG Z, YANG Z, et al. High-temperature operation of AlGaN/GaN HEMTs direct-coupled FET logic (DCFL) integrated circuits[J]. IEEE Electron Device Letters, 2007, 28(5): 328-331.
[13] REINER R, WALTEREIT P, WEISS B, et al. Monolithically integrated power circuits in high-voltage GaN-on-Si heterojunction technology[J]. IET Power Electronics, 2018, 11(4): 681-688.
[14] WEI J, TANG G, XIE R, et al. GaN power IC technology on p-GaN gate HEMT platform[J]. Japanese Journal of Applied Physics, 2020, 59(SG): SG0801.
[15] SUN R, LIANG Y C, YEO Y-C, et al. All-GaN power integration: Devices to functional subcircuits and converter ICs[J]. IEEE Journal of Emerging and Selected Topics in Power Electronics, 2020, 8(1): 31-41.
[16] SHUR M S, BYKHOVSKI A D, GASKA R, et al. Accumulation hole layer in p-GaN/AlGaN heterostructures[J]. Applied Physics Letters, 2000, 76(21): 3061-3063.
[17] NAKAJIMA A, KUBOTA S, TSUTSUI K, et al. GaN-based complementary metal-oxide-semiconductor inverter with normally off Pch and Nch MOSFETs fabricated using polarisation-induced holes and electron channels[J]. IET Power Electronics, 2018, 11(4): 689-694.
[18] REUTERS B, HAHN H, POOTH A, et al. Fabrication of p-channel heterostructure field effect transistors with polarization-induced two-dimensional hole gases at metal-polar GaN/AlInGaN interfaces[J]. Journal of Physics D-Applied Physics, 2014, 47(17): 175103.
[19] ZHANG Z, ENCOMENDERO J, CHAUDHURI R, et al. Polarization-induced 2D hole gases in pseudomorphic undoped GaN/AlN heterostructures on single-crystal AIN substrates[J]. Applied Physics Letters, 2021, 119(16):162104.
[20] HAHN H, REUTERS B, POOTH A, et al. p-Channel enhancement and depletion mode GaN-based HFETs with quaternary backbarriers[J]. IEEE Transactions on Electron Devices, 2013, 60(10): 3005-3011.
[21] LI G, WANG R, SONG B, et al. Polarization-induced GaN-on-insulator E/D mode p-channel heterostructure FETs[J]. IEEE Electron Device Letters, 2013, 34(7): 852-854.
[22] HAHN H, REUTERS B, KOTZEA S, et al. First monolithic integration of GaN-based enhancement mode n-channel and p-channel heterostructure field effect transistors[C]// 2014 72nd Annual Device Research Conference (DRC), 2014: 259-260.
[23] CHU R, CAO Y, CHEN M, et al. An experimental demonstration of GaN CMOS technology[J]. IEEE Electron Device Letters, 2016, 37(3): 269-271.
[24] ZHENG Z, SONG W, ZHANG L, et al. High ION and ION/IOFF ratio enhancement-mode buried p-channel GaN MOSFETs on p-GaN gate power HEMT platform[J]. IEEE Electron Device Letters, 2020, 41(1): 26-29.
[25] ZHENG Z, ZHANG L, SONG W, et al. Gallium nitride-based complementary logic integrated circuits[J]. Nature Electronics, 2021, 4(8): 595-603.
[26] CHEN J, LIU Z, WANG H, et al. A GaN complementary FET inverter with excellent noise margins monolithically integrated with power gate-injection HEMTs[J]. IEEE Transactions on Electron Devices, 2022, 69(1): 51-56.
[27] CHENG Z, MU F, YATES L, et al. Interfacial thermal conductance across room-temperature-bonded GaN/diamond interfaces for GaN-on-diamond devices[J]. ACS Applied Materials & Interfaces, 2020, 12(7): 8376-8384.
[28] WANG C, HUA M, YANG S, et al. E-mode p-n Junction/AlGaN/GaN HEMTs with enhanced gate reliability[C]// Proceedings of the 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020: 14-17.
[29] HE J, TANG G, CHEN K J. VTH instability of p-GaN gate HEMTs under static and dynamic gate stress[J]. IEEE Electron Device Letters, 2018, 39(10): 1576-1579.
[30] WEI J, XU H, XIE R, et al. Principles and impacts of dynamic threshold voltage in a p-GaN gate high-electron-mobility transistor[J]. Semiconductor Science and Technology, 2021, 36(2): 024006.
[31] HUA M, CHEN J, WANG C, et al. E-mode p-GaN gate HEMT with p-FET bridge for higher VTH and enhanced VTH stability[C]// 2020 IEEE International Electron Devices Meeting (IEDM), 2020.
[32] PU T, WANG X, HUANG Q, et al. Normally-off AlGaN/GaN heterojunction metal-insulator-semiconductor field-effect transistors with gate-first process[J]. IEEE Electron Device Letters, 2019, 40(2): 185-188.
[33] HE J, ZHONG Y, ZHOU Y, et al. Recovery of p-GaN surface damage induced by dry etching for the formation of p-type ohmic contact[J]. Applied Physics Express, 2019, 12(5): 055507.
[34] WANG J, LU S, CAI W, et al. Ohmic contact to p-type GaN enabled by post-growth diffusion of magnesium[J]. IEEE Electron Device Letters, 2022, 43(1): 150-153.
[35] LI L, WANG X, LIU Y, et al. NiO/GaN heterojunction diode deposited through magnetron reactive sputtering[J]. Journal of Vacuum Science & Technology a Vacuum Surfaces & Films, 2016, 34(2): 02D104.
[36] ZHANG T, LI X, PU T, et al. Transparent ohmic contact for boron doped diamond using p-type NiO film synthesized through oxidation[J]. Materials Science in Semiconductor Processing, 2020, 105: 104740.
[37] YANG D, HUANG Y, LIU K, et al. The transparent NiO film ohmic contact to p-type and unintentionally doped In0.53Ga0.47As[J]. Materials Science in Semiconductor Processing, 2021, 131(4): 105855.

中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

GaN基互补型逻辑电路的研究进展及挑战^*

Research Progress and Challenges of GaN-BasedComplementary Logic Circuits

PDF

可视化

摘要/Abstract

引用本文

使用本文

参考文献

相关文章 15

编辑推荐

Metrics

本文评价

[1]	秦尧;明鑫;叶自凯;庄春旺;张波. GaN HEMT及GaN栅驱动电路在DToF激光雷达中的应用^*[J]. 电子与封装, 2023, 23(1): 10103-.
[2]	黄森, 张寒, 郭富强, 王鑫华, 蒋其梦, 魏珂, 刘新宇. 面向下一代GaN功率技术的超薄势垒AlGaN/GaN异质结功率器件^*[J]. 电子与封装, 2023, 23(1): 10102-.
[3]	黄火林;孙楠. GaN基增强型HEMT器件的研究进展^*[J]. 电子与封装, 2023, 23(1): 10108-.
[4]	匡维哲;周琦;陈佳瑞;杨凯;张波. 自热效应下P-GaN HEMT的阈值漂移机理^*[J]. 电子与封装, 2022, 22(8): 80401-.
[5]	邱一武;吴伟林;颜元凯;周昕杰;黄伟. ⁶⁰Co γ射线对增强型GaN HEMT直流特性的影响[J]. 电子与封装, 2022, 22(7): 70401-.
[6]	崔朝探, 陈政, 杜鹏搏, 焦雪龙, 曲韩宾. X波段小型封装GaN功率放大器设计 [J]. 电子与封装, 2022, 22(6): 60202-.
[7]	伍振;周琦;潘超武;杨宁;张波. 重复短路应力下p-GaN HEMT器件的阈值电压退化机制^*[J]. 电子与封装, 2022, 22(6): 60401-.
[8]	苏鹏;顾黎明;唐世军;周书同. Ku波段200 W GaN功率放大器的设计与实现[J]. 电子与封装, 2022, 22(11): 110307-.
[9]	穆昌根, 党睿, 袁鹏, 陈大正. 增强型GaN HEMT器件的实现方法与研究进展^*[J]. 电子与封装, 2022, 22(10): 100401-.
[10]	王建浩;刘雪;王琪;戈硕;唐厚鹭. VHF 600 W GaN功率模块研制[J]. 电子与封装, 2021, 21(5): 50303-.
[11]	陈金远;焦芳;王逸铭;林罡. GaAs多功能MMIC在片测试系统设计[J]. 电子与封装, 2021, 21(3): 30204-.
[12]	鲍婕,周德金,陈珍海,宁仁霞,吴伟东,黄伟. GaN HEMT器件封装技术研究进展^*[J]. 电子与封装, 2021, 21(2): 20101-.
[13]	鲍婕,周德金,陈珍海,宁仁霞,吴伟东,黄伟. GaN HEMT电力电子器件技术研究进展^*[J]. 电子与封装, 2021, 21(2): 20102-.
[14]	赖静雪, 陈万军, 孙瑞泽, 刘超, 张波. GaN单片功率集成电路研究进展^*[J]. 电子与封装, 2021, 21(2): 20103-.
[15]	周德金, 何宁业, 宁仁霞, 许媛, 徐宏, 陈珍海, 黄伟, 卢红亮. GaN HEMT栅驱动技术研究进展^*[J]. 电子与封装, 2021, 21(2): 20104-.